GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen

M. Pagels; F. Reinhardt; B. Pollakowski; M. Roczen; C. Becker; K. Lips; B. Rech; B. Kanngießer; B. Beckhoff

doi:10.1016/j.nimb.2009.09.009

GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen

M. Pagels
, F. Reinhardt
, B. Pollakowski
, M. Roczen
, C. Becker
, K. Lips
, B. Rech
, B. Kanngießer
, B. Beckhoff

Research output: Contribution to journal › Article › Research › peer-review

16 Citations (Scopus)

Abstract

GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing.

Original language	English
Pages (from-to)	370-373
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	268
Issue number	3-4
DOIs	https://doi.org/10.1016/j.nimb.2009.09.009
Publication status	Published - Feb 2010
Externally published	Yes

Keywords

Depth profiles
Grazing incidence X-ray fluorescence
Near edge X-ray absorption fine structure spectroscopy
Reference-free
Silicon thin-film solar cell
ZnO/Si interface

Access to Document

10.1016/j.nimb.2009.09.009

Cite this

Pagels, M., Reinhardt, F., Pollakowski, B., Roczen, M., Becker, C., Lips, K., Rech, B., Kanngießer, B., & Beckhoff, B. (2010). GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268(3-4), 370-373. https://doi.org/10.1016/j.nimb.2009.09.009

@article{db7db63c7955460fb4225b02041ccb85,

title = "GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen",

abstract = "GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing.",

keywords = "Depth profiles, Grazing incidence X-ray fluorescence, Near edge X-ray absorption fine structure spectroscopy, Reference-free, Silicon thin-film solar cell, ZnO/Si interface",

author = "M. Pagels and F. Reinhardt and B. Pollakowski and M. Roczen and C. Becker and K. Lips and B. Rech and B. Kanngie{\ss}er and B. Beckhoff",

year = "2010",

month = feb,

doi = "10.1016/j.nimb.2009.09.009",

language = "English",

volume = "268",

pages = "370--373",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier BV",

number = "3-4",

}

Pagels, M, Reinhardt, F, Pollakowski, B, Roczen, M, Becker, C, Lips, K, Rech, B, Kanngießer, B & Beckhoff, B 2010, 'GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 268, no. 3-4, pp. 370-373. https://doi.org/10.1016/j.nimb.2009.09.009

GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen. / Pagels, M.; Reinhardt, F.; Pollakowski, B. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 268, No. 3-4, 02.2010, p. 370-373.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - GIXRF-NEXAFS investigations on buried ZnO/Si interfaces

T2 - A first insight in changes of chemical states due to annealing of the specimen

AU - Pagels, M.

AU - Reinhardt, F.

AU - Pollakowski, B.

AU - Roczen, M.

AU - Becker, C.

AU - Lips, K.

AU - Rech, B.

AU - Kanngießer, B.

AU - Beckhoff, B.

PY - 2010/2

Y1 - 2010/2

N2 - GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing.

AB - GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing.

KW - Depth profiles

KW - Grazing incidence X-ray fluorescence

KW - Near edge X-ray absorption fine structure spectroscopy

KW - Reference-free

KW - Silicon thin-film solar cell

KW - ZnO/Si interface

UR - https://www.scopus.com/pages/publications/76049110298

U2 - 10.1016/j.nimb.2009.09.009

DO - 10.1016/j.nimb.2009.09.009

M3 - Article

AN - SCOPUS:76049110298

SN - 0168-583X

VL - 268

SP - 370

EP - 373

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3-4

ER -

Pagels M, Reinhardt F, Pollakowski B, Roczen M, Becker C, Lips K et al. GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2010 Feb;268(3-4):370-373. doi: 10.1016/j.nimb.2009.09.009

GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen

Abstract

Keywords

Access to Document

Other files and links

Cite this