GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen

M. Pagels, F. Reinhardt, B. Pollakowski, M. Roczen, C. Becker, K. Lips, B. Rech, B. Kanngießer, B. Beckhoff

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Abstract

GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing.

Original languageEnglish
Pages (from-to)370-373
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume268
Issue number3-4
DOIs
Publication statusPublished - Feb 2010
Externally publishedYes

Keywords

  • Depth profiles
  • Grazing incidence X-ray fluorescence
  • Near edge X-ray absorption fine structure spectroscopy
  • Reference-free
  • Silicon thin-film solar cell
  • ZnO/Si interface

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