Abstract
Controlling magnetism with electric field directly or through strain-driven piezoelectric coupling remains a key goal of spintronics. Here, we demonstrate that giant piezomagnetism, a linear magneto-mechanic coupling effect, is manifest in antiperovskite Mn3NiN, facilitated by its geometrically frustrated antiferromagnetism opening the possibility of new memory device concepts. Films of Mn3NiN with intrinsic biaxial strains of ±0.25% result in Néel transition shifts up to 60 K and magnetization changes consistent with theory. Films grown on BaTiO3 display a striking magnetization jump in response to uniaxial strain from the intrinsic BaTiO3 structural transition, with an inferred 44% strain coupling efficiency and a magnetoelectric coefficient α (where α = dB/dE) of 0.018 G cm/V. The latter agrees with the 1000-fold increase over Cr2O3 predicted by theory. Overall, our observations pave the way for further research into the broader family of Mn-based antiperovskites where yet larger piezomagnetic effects are predicted to occur at room temperature.
Original language | English |
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Pages (from-to) | 18863-18868 |
Number of pages | 6 |
Journal | ACS Applied Materials & Interfaces |
Volume | 10 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2018 |
Externally published | Yes |
Keywords
- antiferromagnet
- antiperovskite
- nonvolatile memory
- piezomagnetism
- spintronics