Generation of electrochemically deposited metal patterns by means of electron beam (nano)lithography of self-assembled monolayer resists

J. A.M. Sondag-Huethorst; H. R.J. Van Helleputte; L. G.J. Fokkink

doi:10.1063/1.111182

Generation of electrochemically deposited metal patterns by means of electron beam (nano)lithography of self-assembled monolayer resists

J. A.M. Sondag-Huethorst
, H. R.J. Van Helleputte
, L. G.J. Fokkink

Research output: Contribution to journal › Article › Research › peer-review

103 Citations (Scopus)

Abstract

Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C₂₂H ₄₅SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10-100 mC cm^-2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO₄ concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.

Original language	English
Pages (from-to)	285-287
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	3
DOIs	https://doi.org/10.1063/1.111182
Publication status	Published - 1 Dec 1994
Externally published	Yes

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10.1063/1.111182

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title = "Generation of electrochemically deposited metal patterns by means of electron beam (nano)lithography of self-assembled monolayer resists",

abstract = "Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C22H 45SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10-100 mC cm-2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO4 concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.",

author = "Sondag-Huethorst, \{J. A.M.\} and \{Van Helleputte\}, \{H. R.J.\} and Fokkink, \{L. G.J.\}",

year = "1994",

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doi = "10.1063/1.111182",

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journal = "Applied Physics Letters",

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T1 - Generation of electrochemically deposited metal patterns by means of electron beam (nano)lithography of self-assembled monolayer resists

AU - Sondag-Huethorst, J. A.M.

AU - Van Helleputte, H. R.J.

AU - Fokkink, L. G.J.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C22H 45SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10-100 mC cm-2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO4 concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.

AB - Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C22H 45SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10-100 mC cm-2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO4 concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.

UR - https://www.scopus.com/pages/publications/21544461322

U2 - 10.1063/1.111182

DO - 10.1063/1.111182

M3 - Article

AN - SCOPUS:21544461322

SN - 0003-6951

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SP - 285

EP - 287

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Generation of electrochemically deposited metal patterns by means of electron beam (nano)lithography of self-assembled monolayer resists

Abstract

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