Generation of electrochemically deposited metal patterns by means of electron beam (nano)lithography of self-assembled monolayer resists

J. A.M. Sondag-Huethorst, H. R.J. Van Helleputte, L. G.J. Fokkink

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Abstract

Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C22H 45SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10-100 mC cm-2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO4 concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.

Original languageEnglish
Pages (from-to)285-287
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number3
DOIs
Publication statusPublished - 1 Dec 1994
Externally publishedYes

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