Finite element analysis of copper wire bonding in integrated circuit devices

Nauman Dastgir Ahmad, Pooria Pasbakhsh, Ningqun Guo, Norhazlin Ismail, Kheng Lim Goh

    Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

    3 Citations (Scopus)


    Axisymmetric finite element models of copper wire-bond-pad structure for an integrated circuit devicewere developed to investigate theeffects of bonding force, initial bonding temperature, Aluminum metallization thickness, bond pad thickness and free air ball (FAB) diameter on induced stresses in the wire-bond structure. The results show that an increase in bonding force greatly increased the induced stresses in the copper FAB and bond pad (aluminum and silicon). However, a change in bonding temperature while keeping the bonding force constant does not result in an appreciable change in the stress. Similarly an increase in aluminium metallization thickness does not yield appreciable variation in the stress and strain in the bond pad. Over the range of FAB diameters studied it is found that bigger FAB yields smaller stress in the overall structure.
    Original languageEnglish
    Title of host publicationProceedings of the 2012 International Conference on Machine Design and Manufacturing Engineering
    EditorsKatsuyuki Kida, Sally Gao
    Place of PublicationSwitzerland
    PublisherTrans Tech Publications
    Pages293 - 299
    Number of pages7
    ISBN (Print)9783037854709
    Publication statusPublished - 2012
    EventInternational Conference on Machine Design and Manufacturing Engineering - Korea, Switzerland
    Duration: 1 Jan 2012 → …


    ConferenceInternational Conference on Machine Design and Manufacturing Engineering
    Period1/01/12 → …

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