Abstract
Axisymmetric finite element models of copper wire-bond-pad structure for an integrated circuit devicewere developed to investigate theeffects of bonding force, initial bonding temperature, Aluminum metallization thickness, bond pad thickness and free air ball (FAB) diameter on induced stresses in the wire-bond structure. The results show that an increase in bonding force greatly increased the induced stresses in the copper FAB and bond pad (aluminum and silicon). However, a change in bonding temperature while keeping the bonding force constant does not result in an appreciable change in the stress. Similarly an increase in aluminium metallization thickness does not yield appreciable variation in the stress and strain in the bond pad. Over the range of FAB diameters studied it is found that bigger FAB yields smaller stress in the overall structure.
Original language | English |
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Title of host publication | Proceedings of the 2012 International Conference on Machine Design and Manufacturing Engineering |
Editors | Katsuyuki Kida, Sally Gao |
Place of Publication | Switzerland |
Publisher | Trans Tech Publications |
Pages | 293 - 299 |
Number of pages | 7 |
ISBN (Print) | 9783037854709 |
DOIs | |
Publication status | Published - 2012 |
Event | International Conference on Machine Design and Manufacturing Engineering 2012 - Korea, Switzerland Duration: 1 Jan 2012 → … |
Conference
Conference | International Conference on Machine Design and Manufacturing Engineering 2012 |
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City | Switzerland |
Period | 1/01/12 → … |