Finite element analysis of copper wire bonding in integrated circuit devices

Nauman Dastgir Ahmad, Pooria Pasbakhsh, Ningqun Guo, Norhazlin Ismail, Kheng Lim Goh

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

5 Citations (Scopus)

Abstract

Axisymmetric finite element models of copper wire-bond-pad structure for an integrated circuit devicewere developed to investigate theeffects of bonding force, initial bonding temperature, Aluminum metallization thickness, bond pad thickness and free air ball (FAB) diameter on induced stresses in the wire-bond structure. The results show that an increase in bonding force greatly increased the induced stresses in the copper FAB and bond pad (aluminum and silicon). However, a change in bonding temperature while keeping the bonding force constant does not result in an appreciable change in the stress. Similarly an increase in aluminium metallization thickness does not yield appreciable variation in the stress and strain in the bond pad. Over the range of FAB diameters studied it is found that bigger FAB yields smaller stress in the overall structure.
Original languageEnglish
Title of host publicationProceedings of the 2012 International Conference on Machine Design and Manufacturing Engineering
EditorsKatsuyuki Kida, Sally Gao
Place of PublicationSwitzerland
PublisherTrans Tech Publications
Pages293 - 299
Number of pages7
ISBN (Print)9783037854709
DOIs
Publication statusPublished - 2012
EventInternational Conference on Machine Design and Manufacturing Engineering 2012 - Korea, Switzerland
Duration: 1 Jan 2012 → …

Conference

ConferenceInternational Conference on Machine Design and Manufacturing Engineering 2012
CitySwitzerland
Period1/01/12 → …

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