FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon

Vivek Garg; Rakesh G. Mote; Jing Fu

doi:10.1109/NANO.2017.8117423

FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon

Vivek Garg
, Rakesh G. Mote
, Jing Fu

Mechanical & Aerospace Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other › peer-review

2 Citations (Scopus)

Abstract

We introduce and demonstrate highly ordered vertical Gaussian pillar anti-reflective nanostructures on single crystalline silicon. The pillars are fabricated using Focused Ion Beam (FIB) in a single step by adopting a unique approach and overlap of incoming FIB Gaussian profile. These pillars are highly ordered and reproducible in a time effective manner. Using FDTD calculations, we demonstrate the suitability of proposed Gaussian pillars for antireflection properties. The proposed structures exhibit maximum 10% reflection for a broad wavelength range of 400-1000 nm.

Original language	English
Title of host publication	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	707-712
Number of pages	6
ISBN (Electronic)	9781509030286
DOIs	https://doi.org/10.1109/NANO.2017.8117423
Publication status	Published - 21 Nov 2017
Event	IEEE International Conference on Nanotechnology 2017 - Pittsburgh, United States of America Duration: 25 Jul 2017 → 28 Jul 2017 Conference number: 17th https://ieeexplore.ieee.org/xpl/conhome/8103843/proceeding (Proceedings)

Conference

Conference	IEEE International Conference on Nanotechnology 2017
Abbreviated title	IEEE-NANO 2017
Country/Territory	United States of America
City	Pittsburgh
Period	25/07/17 → 28/07/17
Internet address	https://ieeexplore.ieee.org/xpl/conhome/8103843/proceeding (Proceedings)

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10.1109/NANO.2017.8117423

Cite this

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title = "FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon",

abstract = "We introduce and demonstrate highly ordered vertical Gaussian pillar anti-reflective nanostructures on single crystalline silicon. The pillars are fabricated using Focused Ion Beam (FIB) in a single step by adopting a unique approach and overlap of incoming FIB Gaussian profile. These pillars are highly ordered and reproducible in a time effective manner. Using FDTD calculations, we demonstrate the suitability of proposed Gaussian pillars for antireflection properties. The proposed structures exhibit maximum 10\% reflection for a broad wavelength range of 400-1000 nm.",

author = "Vivek Garg and Mote, \{Rakesh G.\} and Jing Fu",

year = "2017",

month = nov,

day = "21",

doi = "10.1109/NANO.2017.8117423",

language = "English",

pages = "707--712",

booktitle = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "IEEE International Conference on Nanotechnology 2017, IEEE-NANO 2017 ; Conference date: 25-07-2017 Through 28-07-2017",

url = "https://ieeexplore.ieee.org/xpl/conhome/8103843/proceeding",

}

Garg, V, Mote, RG & Fu, J 2017, FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon. in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. IEEE, Institute of Electrical and Electronics Engineers, pp. 707-712, IEEE International Conference on Nanotechnology 2017, Pittsburgh, Pennsylvania, United States of America, 25/07/17. https://doi.org/10.1109/NANO.2017.8117423

FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon. / Garg, Vivek; Mote, Rakesh G.; Fu, Jing.
2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. IEEE, Institute of Electrical and Electronics Engineers, 2017. p. 707-712.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other › peer-review

TY - GEN

T1 - FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon

AU - Garg, Vivek

AU - Mote, Rakesh G.

AU - Fu, Jing

N1 - Conference code: 17th

PY - 2017/11/21

Y1 - 2017/11/21

N2 - We introduce and demonstrate highly ordered vertical Gaussian pillar anti-reflective nanostructures on single crystalline silicon. The pillars are fabricated using Focused Ion Beam (FIB) in a single step by adopting a unique approach and overlap of incoming FIB Gaussian profile. These pillars are highly ordered and reproducible in a time effective manner. Using FDTD calculations, we demonstrate the suitability of proposed Gaussian pillars for antireflection properties. The proposed structures exhibit maximum 10% reflection for a broad wavelength range of 400-1000 nm.

AB - We introduce and demonstrate highly ordered vertical Gaussian pillar anti-reflective nanostructures on single crystalline silicon. The pillars are fabricated using Focused Ion Beam (FIB) in a single step by adopting a unique approach and overlap of incoming FIB Gaussian profile. These pillars are highly ordered and reproducible in a time effective manner. Using FDTD calculations, we demonstrate the suitability of proposed Gaussian pillars for antireflection properties. The proposed structures exhibit maximum 10% reflection for a broad wavelength range of 400-1000 nm.

UR - https://www.scopus.com/pages/publications/85041190012

U2 - 10.1109/NANO.2017.8117423

DO - 10.1109/NANO.2017.8117423

M3 - Conference Paper

AN - SCOPUS:85041190012

SP - 707

EP - 712

BT - 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - IEEE International Conference on Nanotechnology 2017

Y2 - 25 July 2017 through 28 July 2017

ER -

FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon

Abstract

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