FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon

Vivek Garg, Rakesh G. Mote, Jing Fu

Research output: Chapter in Book/Report/Conference proceedingConference PaperOtherpeer-review

2 Citations (Scopus)

Abstract

We introduce and demonstrate highly ordered vertical Gaussian pillar anti-reflective nanostructures on single crystalline silicon. The pillars are fabricated using Focused Ion Beam (FIB) in a single step by adopting a unique approach and overlap of incoming FIB Gaussian profile. These pillars are highly ordered and reproducible in a time effective manner. Using FDTD calculations, we demonstrate the suitability of proposed Gaussian pillars for antireflection properties. The proposed structures exhibit maximum 10% reflection for a broad wavelength range of 400-1000 nm.

Original languageEnglish
Title of host publication2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages707-712
Number of pages6
ISBN (Electronic)9781509030286
DOIs
Publication statusPublished - 21 Nov 2017
EventIEEE International Conference on Nanotechnology 2017 - Pittsburgh, United States of America
Duration: 25 Jul 201728 Jul 2017
Conference number: 17th

Conference

ConferenceIEEE International Conference on Nanotechnology 2017
Abbreviated titleIEEE-NANO 2017
CountryUnited States of America
CityPittsburgh
Period25/07/1728/07/17

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