Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO

Yiren Wang; Xi Luo; Li-Ting Tseng; Zhimin Ao; Tong Li; Guozhong Xing; Nina Bao; Kiyonori Suzuki; Jun Ding; Sean Li; Jiabao Yi

doi:10.1021/cm504261q

Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO

Yiren Wang, Xi Luo, Li-Ting Tseng, Zhimin Ao, Tong Li, Guozhong Xing, Nina Bao, Kiyonori Suzuki, Jun Ding, Sean Li, Jiabao Yi

Materials Science & Engineering

Research output: Contribution to journal › Article › Research › peer-review

30 Citations (Scopus)

Abstract

Na doped ZnO films were fabricated via a hydrothermal process. The films have shown room temperature ferromagnetism and p-type conductivity. Crossover of positive to negative magnetoresistance has been observed with the variation of Na doping concentrations. The positive MR is due to p-p exchange interaction induced Zeeman splitting to suppress the hopping path of holes. The ferromagnetism is attributed to the formation of a Zn vacancy complex. The negative magnetoresistance is due to the minimization of spin-dependent scattering by the applied magnetic field.

Original language	English
Pages (from-to)	1285 - 1291
Number of pages	7
Journal	Chemistry of Materials
Volume	27
Issue number	4
DOIs	https://doi.org/10.1021/cm504261q
Publication status	Published - 2015

Access to Document

10.1021/cm504261q

Cite this

@article{f3a753efbea7463ab757a0ba355eae4d,

title = "Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO",

abstract = "Na doped ZnO films were fabricated via a hydrothermal process. The films have shown room temperature ferromagnetism and p-type conductivity. Crossover of positive to negative magnetoresistance has been observed with the variation of Na doping concentrations. The positive MR is due to p-p exchange interaction induced Zeeman splitting to suppress the hopping path of holes. The ferromagnetism is attributed to the formation of a Zn vacancy complex. The negative magnetoresistance is due to the minimization of spin-dependent scattering by the applied magnetic field.",

author = "Yiren Wang and Xi Luo and Li-Ting Tseng and Zhimin Ao and Tong Li and Guozhong Xing and Nina Bao and Kiyonori Suzuki and Jun Ding and Sean Li and Jiabao Yi",

year = "2015",

doi = "10.1021/cm504261q",

language = "English",

volume = "27",

pages = "1285 -- 1291",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "ACS Publications",

number = "4",

}

Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO. / Wang, Yiren; Luo, Xi; Tseng, Li-Ting; Ao, Zhimin; Li, Tong; Xing, Guozhong; Bao, Nina; Suzuki, Kiyonori; Ding, Jun; Li, Sean; Yi, Jiabao.

In: Chemistry of Materials, Vol. 27, No. 4, 2015, p. 1285 - 1291.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO

AU - Wang, Yiren

AU - Luo, Xi

AU - Tseng, Li-Ting

AU - Ao, Zhimin

AU - Li, Tong

AU - Xing, Guozhong

AU - Bao, Nina

AU - Suzuki, Kiyonori

AU - Ding, Jun

AU - Li, Sean

AU - Yi, Jiabao

PY - 2015

Y1 - 2015

N2 - Na doped ZnO films were fabricated via a hydrothermal process. The films have shown room temperature ferromagnetism and p-type conductivity. Crossover of positive to negative magnetoresistance has been observed with the variation of Na doping concentrations. The positive MR is due to p-p exchange interaction induced Zeeman splitting to suppress the hopping path of holes. The ferromagnetism is attributed to the formation of a Zn vacancy complex. The negative magnetoresistance is due to the minimization of spin-dependent scattering by the applied magnetic field.

AB - Na doped ZnO films were fabricated via a hydrothermal process. The films have shown room temperature ferromagnetism and p-type conductivity. Crossover of positive to negative magnetoresistance has been observed with the variation of Na doping concentrations. The positive MR is due to p-p exchange interaction induced Zeeman splitting to suppress the hopping path of holes. The ferromagnetism is attributed to the formation of a Zn vacancy complex. The negative magnetoresistance is due to the minimization of spin-dependent scattering by the applied magnetic field.

UR - http://pubs.acs.org.ezproxy.lib.monash.edu.au/doi/pdf/10.1021/cm504261q

U2 - 10.1021/cm504261q

DO - 10.1021/cm504261q

M3 - Article

VL - 27

SP - 1285

EP - 1291

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 4

ER -

Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO

Abstract

Access to Document

Other files and links

Cite this