Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO

Yiren Wang, Xi Luo, Li-Ting Tseng, Zhimin Ao, Tong Li, Guozhong Xing, Nina Bao, Kiyonori Suzuki, Jun Ding, Sean Li, Jiabao Yi

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Na doped ZnO films were fabricated via a hydrothermal process. The films have shown room temperature ferromagnetism and p-type conductivity. Crossover of positive to negative magnetoresistance has been observed with the variation of Na doping concentrations. The positive MR is due to p-p exchange interaction induced Zeeman splitting to suppress the hopping path of holes. The ferromagnetism is attributed to the formation of a Zn vacancy complex. The negative magnetoresistance is due to the minimization of spin-dependent scattering by the applied magnetic field.
Original languageEnglish
Pages (from-to)1285 - 1291
Number of pages7
JournalChemistry of Materials
Issue number4
Publication statusPublished - 2015

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