Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Rizwan Ur Rehman Sagar; Min Zhang; Xiaohao Wang; Babar Shabbir; Florian J. Stadler

doi:10.1016/j.nanoms.2020.01.002

Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Rizwan Ur Rehman Sagar, Min Zhang, Xiaohao Wang, Babar Shabbir, Florian J. Stadler

Materials Science & Engineering

Research output: Contribution to journal › Article › Research › peer-review

Abstract

Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

Original language	English
Pages (from-to)	346-352
Number of pages	7
Journal	Nano Materials Science
Volume	2
Issue number	4
DOIs	https://doi.org/10.1016/j.nanoms.2020.01.002
Publication status	Published - Dec 2020

Keywords

Graphene foam
Magnetoresistance
Porosity
Defects
Surface area

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10.1016/j.nanoms.2020.01.002

299683091-oaFinal published version, 2.11 MBLicence: CC BY-NC-ND

ARC Centre of Excellence in Future Low-energy Electronics Technologies
Fuhrer, M. (Primary Chief Investigator (PCI)), Bao, Q. (Chief Investigator (CI)), Culcer, D. (Chief Investigator (CI)), Davis, M. (Chief Investigator (CI)), Davis, J. A. (Chief Investigator (CI)), Hamilton, A. (Chief Investigator (CI)), Helmerson, K. (Chief Investigator (CI)), Klochan, O. (Chief Investigator (CI)), Medhekar, N. (Chief Investigator (CI)), Ostrovskaya, E. A. (Chief Investigator (CI)), Parish, M. (Chief Investigator (CI)), Schiffrin, A. (Chief Investigator (CI)), Seidel, J. (Chief Investigator (CI)), Sushkov, O. (Chief Investigator (CI)), Valanoor, N. (Chief Investigator (CI)), Wang, X. (Chief Investigator (CI)), Galitskiy, V. (Partner Investigator (PI)), Gurarie, V. (Partner Investigator (PI)), Hannon, J. (Partner Investigator (PI)), Höfling, S. (Partner Investigator (PI)), Hone, J. (Partner Investigator (PI)), Rule, K. C. (Partner Investigator (PI)), Krausz, F. (Partner Investigator (PI)), Littlewood, P. (Partner Investigator (PI)), MacDonald, A. (Partner Investigator (PI)), Neto, A. (Partner Investigator (PI)), Oezyilmaz, B. (Partner Investigator (PI)), Paglione, J. (Partner Investigator (PI)), Phillips, W. (Partner Investigator (PI)), Spielman, I. (Partner Investigator (PI)), Tadich, A. (Partner Investigator (PI)), Xue, Q. (Partner Investigator (PI)), Cole, J. (Chief Investigator (CI)), Perali, A. (Partner Investigator (PI)), Neilson, D. (Partner Investigator (PI)), Sek, G. (Partner Investigator (PI)), Gaston, N. (Partner Investigator (PI)), Hodgkiss, J. M. (Partner Investigator (PI)), Tang, M. (Partner Investigator (PI)), Karel, J. (Chief Investigator (CI)), Nguyen, T.-L. (Project Manager), Adam, S. (Partner Investigator (PI)), Granville, S. (Partner Investigator (PI)), Kumar, P. V. (Chief Investigator (CI)) & Daeneke, T. (Chief Investigator (CI))
Australian Research Council (ARC), Monash University – Internal School Contribution, Monash University – Internal Department Contribution, Monash University – Internal Faculty Contribution, Monash University – Internal University Contribution, University of Wollongong, University of Queensland , Tsinghua University, University of New South Wales (UNSW), Australian National University (ANU), RMIT University, Swinburne University of Technology
29/06/17 → 28/06/24
Project: Research

Cite this

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title = "Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring",

abstract = "Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.",

keywords = "Graphene foam, Magnetoresistance, Porosity, Defects, Surface area",

author = "{Rehman Sagar}, {Rizwan Ur} and Min Zhang and Xiaohao Wang and Babar Shabbir and Stadler, {Florian J.}",

year = "2020",

month = dec,

doi = "10.1016/j.nanoms.2020.01.002",

language = "English",

volume = "2",

pages = "346--352",

journal = "Nano Materials Science",

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T1 - Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

AU - Rehman Sagar, Rizwan Ur

AU - Zhang, Min

AU - Wang, Xiaohao

AU - Shabbir, Babar

AU - Stadler, Florian J.

PY - 2020/12

Y1 - 2020/12

N2 - Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

AB - Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

KW - Graphene foam

KW - Magnetoresistance

KW - Porosity

KW - Defects

KW - Surface area

U2 - 10.1016/j.nanoms.2020.01.002

DO - 10.1016/j.nanoms.2020.01.002

M3 - Article

SN - 2096-6482

VL - 2

SP - 346

EP - 352

JO - Nano Materials Science

JF - Nano Materials Science

IS - 4

ER -

Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Abstract

Keywords

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Projects

ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this