Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Rizwan Ur Rehman Sagar, Min Zhang, Xiaohao Wang, Babar Shabbir, Florian J. Stadler

Research output: Contribution to journalArticleResearchpeer-review


Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.
Original languageEnglish
Pages (from-to)346-352
Number of pages7
JournalNano Materials Science
Issue number4
Publication statusPublished - Dec 2020


  • Graphene foam
  • Magnetoresistance
  • Porosity
  • Defects
  • Surface area

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