Fabrication of La1-xSrxGa1-y;MgyO 3-(x+y)/2 thin films by electrophoretic deposition and its conductivity measurement

Tom Mathews, Nadine Rabu, J. R. Sellar, B. C. Muddle

Research output: Contribution to journalArticleResearchpeer-review

48 Citations (Scopus)


Thin films of La1-xSrxGa1-yMgyO 3-(x+y)/2 were prepared by the electrophoretic deposition technique using acetone-containing iodine (750 mg l-1 as solvent medium. Between each deposition sintering was performed for 1 h duration at various temperatures, of 100° intervals, in the range 1273-1673 K. At temperatures below 1673 K, the deposited films did not sinter well and were porous. Dense films with uniform thickness of 4 μm were obtained after five repetitions of deposition and sintering at 1673 K. The ionic conductivity of the film was measured using an ac impedance bridge. The conductivity of the films is comparable with that of bulk samples.

Original languageEnglish
Pages (from-to)111-115
Number of pages5
JournalSolid State Ionics
Issue number1-4
Publication statusPublished - 1 Dec 2000


  • Doped lanthanum gallate
  • Electrophoretic deposition
  • Ionic conductivity
  • Solid oxide fuel cells
  • Thin film

Cite this