Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

W. R. Buchwald, A. Balekdjian, J. Conrad, J. W. Burger, J. S.H. Schoenberg, J. S. Tyo, M. D. Abdalla, S. M. Ahern, M. C. Skipper

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

1 Citation (Scopus)

Abstract

The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

Original languageEnglish
Title of host publicationDigest of Technical Papers-IEEE International Pulsed Power Conference
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages970-974
Number of pages5
Publication statusPublished - 1997
Externally publishedYes
EventInternational Pulsed Power Conference 1997 - Baltimore, United States of America
Duration: 29 Jun 19972 Jul 1997
Conference number: 11th

Conference

ConferenceInternational Pulsed Power Conference 1997
Country/TerritoryUnited States of America
CityBaltimore
Period29/06/972/07/97

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