Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

W. R. Buchwald; A. Balekdjian; J. Conrad; J. W. Burger; J. S.H. Schoenberg; J. S. Tyo; M. D. Abdalla; S. M. Ahern; M. C. Skipper

Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

W. R. Buchwald, A. Balekdjian, J. Conrad, J. W. Burger, J. S.H. Schoenberg, J. S. Tyo, M. D. Abdalla, S. M. Ahern, M. C. Skipper

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

6 Citations (Scopus)

Abstract

The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×10⁶ shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

Original language	English
Title of host publication	Digest of Technical Papers-IEEE International Pulsed Power Conference
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	970-974
Number of pages	5
Publication status	Published - 1997
Externally published	Yes
Event	International Pulsed Power Conference 1997 - Baltimore, United States of America Duration: 29 Jun 1997 → 2 Jul 1997 Conference number: 11th

Conference

Conference	International Pulsed Power Conference 1997
Country/Territory	United States of America
City	Baltimore
Period	29/06/97 → 2/07/97

Cite this

Buchwald, W. R., Balekdjian, A., Conrad, J., Burger, J. W., Schoenberg, J. S. H., Tyo, J. S., Abdalla, M. D., Ahern, S. M., & Skipper, M. C. (1997). Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation. In Digest of Technical Papers-IEEE International Pulsed Power Conference (pp. 970-974). IEEE, Institute of Electrical and Electronics Engineers.

@inproceedings{d4cb665a065a433fadbe39cb121b0b8e,

title = "Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation",

abstract = "The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.",

author = "Buchwald, {W. R.} and A. Balekdjian and J. Conrad and Burger, {J. W.} and Schoenberg, {J. S.H.} and Tyo, {J. S.} and Abdalla, {M. D.} and Ahern, {S. M.} and Skipper, {M. C.}",

year = "1997",

language = "English",

pages = "970--974",

booktitle = "Digest of Technical Papers-IEEE International Pulsed Power Conference",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "International Pulsed Power Conference 1997 ; Conference date: 29-06-1997 Through 02-07-1997",

}

Buchwald, WR, Balekdjian, A, Conrad, J, Burger, JW, Schoenberg, JSH, Tyo, JS, Abdalla, MD, Ahern, SM & Skipper, MC 1997, Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation. in Digest of Technical Papers-IEEE International Pulsed Power Conference. IEEE, Institute of Electrical and Electronics Engineers, pp. 970-974, International Pulsed Power Conference 1997, Baltimore, Maryland, United States of America, 29/06/97.

Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation. / Buchwald, W. R.; Balekdjian, A.; Conrad, J. et al.
Digest of Technical Papers-IEEE International Pulsed Power Conference. IEEE, Institute of Electrical and Electronics Engineers, 1997. p. 970-974.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

TY - GEN

T1 - Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

AU - Buchwald, W. R.

AU - Balekdjian, A.

AU - Conrad, J.

AU - Burger, J. W.

AU - Schoenberg, J. S.H.

AU - Tyo, J. S.

AU - Abdalla, M. D.

AU - Ahern, S. M.

AU - Skipper, M. C.

N1 - Conference code: 11th

PY - 1997

Y1 - 1997

N2 - The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

AB - The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

UR - http://www.scopus.com/inward/record.url?scp=0031385297&partnerID=8YFLogxK

M3 - Conference Paper

AN - SCOPUS:0031385297

SP - 970

EP - 974

BT - Digest of Technical Papers-IEEE International Pulsed Power Conference

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - International Pulsed Power Conference 1997

Y2 - 29 June 1997 through 2 July 1997

ER -

Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

Abstract

Conference

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