Extraordinary Mobility in Semiconducting Carbon Nanotubes

T. Dürkop; S. A. Getty; Enrique Cobas; M. S. Fuhrer

doi:10.1021/nl034841q

Extraordinary Mobility in Semiconducting Carbon Nanotubes

T. Dürkop, S. A. Getty, Enrique Cobas, M. S. Fuhrer

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1413 Citations (Scopus)

Abstract

Semiconducting carbon nanotube transistors with channel lengths exceeding 300 microns have been fabricated. In these long transistors, carrier transport is diffusive and the channel resistance dominates the transport. Transport characteristics are used to extract the field-effect mobility (79 000 cm ²/Vs) and estimate the intrinsic mobility (>100 000 cm ²/Vs) at room temperature. These values exceed those for all known semiconductors, which bodes well for application of nanotubes in high-speed transistors, single- and few-electron memories, and chemical/biochemical sensors.

Original language	English
Pages (from-to)	35-39
Number of pages	5
Journal	Nano Letters
Volume	4
Issue number	1
DOIs	https://doi.org/10.1021/nl034841q
Publication status	Published - 1 Jan 2004
Externally published	Yes

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AB - Semiconducting carbon nanotube transistors with channel lengths exceeding 300 microns have been fabricated. In these long transistors, carrier transport is diffusive and the channel resistance dominates the transport. Transport characteristics are used to extract the field-effect mobility (79 000 cm 2/Vs) and estimate the intrinsic mobility (>100 000 cm 2/Vs) at room temperature. These values exceed those for all known semiconductors, which bodes well for application of nanotubes in high-speed transistors, single- and few-electron memories, and chemical/biochemical sensors.

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Extraordinary Mobility in Semiconducting Carbon Nanotubes

Abstract

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