Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer

R. A. Ganeev; D. Y. Lei; C. Hutchison; T. Witting; F. Frank; W. A. Okell; T. R. Roschuk; S. A. Maier; J. W.G. Tisch; J. P. Marangos

doi:10.1007/s00339-012-7430-4

Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer

R. A. Ganeev, D. Y. Lei, C. Hutchison, T. Witting, F. Frank, W. A. Okell, T. R. Roschuk, S. A. Maier, J. W.G. Tisch, J. P. Marangos

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10 Citations (Scopus)

Abstract

We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×10¹³ W cm^-2) and sample moving velocity (1 mm s^-1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.

Original language	English
Pages (from-to)	457-462
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	112
Issue number	2
DOIs	https://doi.org/10.1007/s00339-012-7430-4
Publication status	Published - Aug 2013
Externally published	Yes

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Ganeev, R. A., Lei, D. Y., Hutchison, C., Witting, T., Frank, F., Okell, W. A., Roschuk, T. R., Maier, S. A., Tisch, J. W. G., & Marangos, J. P. (2013). Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer. Applied Physics A: Materials Science and Processing, 112(2), 457-462. https://doi.org/10.1007/s00339-012-7430-4

@article{801e90e12dc34c7ab67f0c16db44ed5b,

title = "Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer",

abstract = "We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013 W cm-2) and sample moving velocity (1 mm s-1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.",

author = "Ganeev, \{R. A.\} and Lei, \{D. Y.\} and C. Hutchison and T. Witting and F. Frank and Okell, \{W. A.\} and Roschuk, \{T. R.\} and Maier, \{S. A.\} and Tisch, \{J. W.G.\} and Marangos, \{J. P.\}",

note = "Funding Information: These studies were supported by EPSRC programme (grants No. EP/F034601/1, EP/E028063/1, and EP/I032517/1). R.A. Ganeev acknowledges support from the Marie Curie International Incoming Fellowship Grant within the 7th European Community Framework Programme (grant PIIF-GA-2009-253104).",

year = "2013",

month = aug,

doi = "10.1007/s00339-012-7430-4",

language = "English",

volume = "112",

pages = "457--462",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer",

number = "2",

}

Ganeev, RA, Lei, DY, Hutchison, C, Witting, T, Frank, F, Okell, WA, Roschuk, TR, Maier, SA, Tisch, JWG & Marangos, JP 2013, 'Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer', Applied Physics A: Materials Science and Processing, vol. 112, no. 2, pp. 457-462. https://doi.org/10.1007/s00339-012-7430-4

TY - JOUR

T1 - Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer

AU - Ganeev, R. A.

AU - Lei, D. Y.

AU - Hutchison, C.

AU - Witting, T.

AU - Frank, F.

AU - Okell, W. A.

AU - Roschuk, T. R.

AU - Maier, S. A.

AU - Tisch, J. W.G.

AU - Marangos, J. P.

N1 - Funding Information: These studies were supported by EPSRC programme (grants No. EP/F034601/1, EP/E028063/1, and EP/I032517/1). R.A. Ganeev acknowledges support from the Marie Curie International Incoming Fellowship Grant within the 7th European Community Framework Programme (grant PIIF-GA-2009-253104).

PY - 2013/8

Y1 - 2013/8

N2 - We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013 W cm-2) and sample moving velocity (1 mm s-1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.

AB - We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013 W cm-2) and sample moving velocity (1 mm s-1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.

UR - https://www.scopus.com/pages/publications/84880277492

U2 - 10.1007/s00339-012-7430-4

DO - 10.1007/s00339-012-7430-4

M3 - Article

AN - SCOPUS:84880277492

SN - 0947-8396

VL - 112

SP - 457

EP - 462

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -

Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer

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