Experimental charge density analysis of a gallium(I) N-heterocyclic carbene analogue

Jacob Overgaard, Cameron Jones, Deepak Dange, JamesA Patts

Research output: Contribution to journalArticleResearchpeer-review

33 Citations (Scopus)

Abstract

The experimental electron density of the only known example of a four-membered Ga(I) N-heterocyclic carbene analogue has been determined by multipole modeling of 90 K X-ray diffraction data and compared to theoretical data. In order to obtain a satisfactory model, it is necessary to modify 1 the radial dependency of the core electrons of Ga using two separate scaling parameters for s,p- and d-electrons. Evidence for significant lone-pair density on Ga is found in the electron density and derived properties despite the partial positive charge of this atom. Static deformation density and molecular electrostatic potential clearly show a directional lone pair on Ga, whereas the Laplacian of the total electron density does not; this feature is, however, present in the Laplacian of the valence-only density. The Ga center also acts as an acceptor in four intramolecular C-H center dot center dot center dot Ga contacts, whose nature is probed by density properties. Substantial covalent character is apparent in the Ga-N bonds, but no sign of donation from filled N p-orbitals to empty Ga p-orbitals is found, whereas pi-delocalization over the organic ligand is evident. This study highlights the utility of experimental charge density analysis as a technique to investigate the unusual bonding and electronic characteristics of low oxidation state/low coordinate p-block complexes.
Original languageEnglish
Pages (from-to)8418 - 8426
Number of pages9
JournalInorganic Chemistry
Volume50
Issue number17
DOIs
Publication statusPublished - 2011

Cite this