Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots

Yan Fu; Daekyoung Kim; Wei Jiang; Wenping Yin; Tae Kyu Ahn; Heeyeop Chae

doi:10.1039/c7ra06957j

Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots

Yan Fu, Daekyoung Kim, Wei Jiang, Wenping Yin, Tae Kyu Ahn, Heeyeop Chae

Research output: Contribution to journal › Article › Research › peer-review

80 Citations (Scopus)

Abstract

Significant progresses made in the performance of quantum dot (QD) light-emitting diodes have often been associated with basic changes in QD synthesis, particularly with respect to composition and structure. Here we show that the absolute photoluminescence (PL) quantum yield (QY) of QD can reach 88% with a full width of 21 nm at half-maximum (FWHM) when an optimal thickness is chosen for the outer shell of alloyed, graded core/shell QDs. Thicker shell QD-LEDs with a maximum current efficiency of 56.6 cd A^-1 , an external quantum efficiency of 14.8%, and a brightness of 62 000 cd m^-2 are demonstrated. Green emitting QDs of CdSe@ZnS/ZnS with this optimal thickness is also most resistant to photo-stimulated degradation by UV exposure. Only a 7% loss in PL intensity results even after more than 400 hours of exposure to harsh conditions of 85 °C and 85% relative humidity.

Original language	English
Pages (from-to)	40866-40872
Number of pages	7
Journal	RSC Advances
Volume	7
Issue number	65
DOIs	https://doi.org/10.1039/c7ra06957j
Publication status	Published - 2017
Externally published	Yes

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title = "Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots",

abstract = " Significant progresses made in the performance of quantum dot (QD) light-emitting diodes have often been associated with basic changes in QD synthesis, particularly with respect to composition and structure. Here we show that the absolute photoluminescence (PL) quantum yield (QY) of QD can reach 88% with a full width of 21 nm at half-maximum (FWHM) when an optimal thickness is chosen for the outer shell of alloyed, graded core/shell QDs. Thicker shell QD-LEDs with a maximum current efficiency of 56.6 cd A-1 , an external quantum efficiency of 14.8%, and a brightness of 62 000 cd m-2 are demonstrated. Green emitting QDs of CdSe@ZnS/ZnS with this optimal thickness is also most resistant to photo-stimulated degradation by UV exposure. Only a 7% loss in PL intensity results even after more than 400 hours of exposure to harsh conditions of 85 °C and 85% relative humidity. ",

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T1 - Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots

AU - Fu, Yan

AU - Kim, Daekyoung

AU - Jiang, Wei

AU - Yin, Wenping

AU - Ahn, Tae Kyu

AU - Chae, Heeyeop

PY - 2017

Y1 - 2017

N2 - Significant progresses made in the performance of quantum dot (QD) light-emitting diodes have often been associated with basic changes in QD synthesis, particularly with respect to composition and structure. Here we show that the absolute photoluminescence (PL) quantum yield (QY) of QD can reach 88% with a full width of 21 nm at half-maximum (FWHM) when an optimal thickness is chosen for the outer shell of alloyed, graded core/shell QDs. Thicker shell QD-LEDs with a maximum current efficiency of 56.6 cd A-1 , an external quantum efficiency of 14.8%, and a brightness of 62 000 cd m-2 are demonstrated. Green emitting QDs of CdSe@ZnS/ZnS with this optimal thickness is also most resistant to photo-stimulated degradation by UV exposure. Only a 7% loss in PL intensity results even after more than 400 hours of exposure to harsh conditions of 85 °C and 85% relative humidity.

AB - Significant progresses made in the performance of quantum dot (QD) light-emitting diodes have often been associated with basic changes in QD synthesis, particularly with respect to composition and structure. Here we show that the absolute photoluminescence (PL) quantum yield (QY) of QD can reach 88% with a full width of 21 nm at half-maximum (FWHM) when an optimal thickness is chosen for the outer shell of alloyed, graded core/shell QDs. Thicker shell QD-LEDs with a maximum current efficiency of 56.6 cd A-1 , an external quantum efficiency of 14.8%, and a brightness of 62 000 cd m-2 are demonstrated. Green emitting QDs of CdSe@ZnS/ZnS with this optimal thickness is also most resistant to photo-stimulated degradation by UV exposure. Only a 7% loss in PL intensity results even after more than 400 hours of exposure to harsh conditions of 85 °C and 85% relative humidity.

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Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots

Abstract

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