Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating

Kui Jin, Wei Hu, Beiyi Zhu, Dohun Kim, Jie Yuan, Yujie Sun, Tao Xiang, Michael S. Fuhrer, Ichiro Takeuchi, Richard L. Greene

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The occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2−xCexCuO4 (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of −2 V to + 2 V, as well as varying the temperature and magnetic field. In the mixed state, the intrinsic anomalous Hall conductivity invokes the contribution of both electron and hole-bands as well as the energy dependent density of states near the Fermi level. The two-band model can also describe the normal state transport properties well, whereas the carrier concentrations of electrons and holes are always enhanced or depressed simultaneously in electric fields. This is in contrast to the scenario of Fermi surface reconstruction by antiferromagnetism, where an anti-correlation is commonly expected.

Original languageEnglish
Article number26642
Number of pages6
JournalScientific Reports
Issue number1
Publication statusPublished - 31 May 2016

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