Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2

E. Blundo; M. Felici; T. Yildirim; G. Pettinari; D. Tedeschi; A. Miriametro; B. Liu; W. Ma; Y. Lu; A. Polimeni

doi:10.1103/PhysRevResearch.2.012024

Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2

E. Blundo
, M. Felici
, T. Yildirim
, G. Pettinari
, D. Tedeschi
, A. Miriametro
, B. Liu
, W. Ma
, Y. Lu
, A. Polimeni

Research output: Contribution to journal › Article › Research › peer-review

157 Citations (Scopus)

Abstract

We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of 1-ML-thick, H2-filled domes. The electronic properties of the curved MLs are mapped by spatially and time-resolved microphotoluminescence, revealing the mechanical stress conditions that trigger the variation of the band gap character. This general phenomenon, also observed in MoS2 and WSe2, further increases our understanding of the electronic structure of transition metal dichalcogenide MLs and holds a great relevance for their optoelectronic applications.

Original language	English
Article number	012024
Number of pages	7
Journal	Physical Review Research
Volume	2
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevResearch.2.012024
Publication status	Published - 23 Jan 2020
Externally published	Yes

Access to Document

10.1103/PhysRevResearch.2.012024

Cite this

@article{302bcbdc7f784606b17fd4f3289e9330,

title = "Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2",

abstract = "We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of 1-ML-thick, H2-filled domes. The electronic properties of the curved MLs are mapped by spatially and time-resolved microphotoluminescence, revealing the mechanical stress conditions that trigger the variation of the band gap character. This general phenomenon, also observed in MoS2 and WSe2, further increases our understanding of the electronic structure of transition metal dichalcogenide MLs and holds a great relevance for their optoelectronic applications.",

author = "E. Blundo and M. Felici and T. Yildirim and G. Pettinari and D. Tedeschi and A. Miriametro and B. Liu and W. Ma and Y. Lu and A. Polimeni",

note = "Publisher Copyright: {\textcopyright} 2020 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.",

year = "2020",

month = jan,

day = "23",

doi = "10.1103/PhysRevResearch.2.012024",

language = "English",

volume = "2",

journal = "Physical Review Research",

issn = "2643-1564",

publisher = "American Physical Society",

number = "1",

}

TY - JOUR

T1 - Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2

AU - Blundo, E.

AU - Felici, M.

AU - Yildirim, T.

AU - Pettinari, G.

AU - Tedeschi, D.

AU - Miriametro, A.

AU - Liu, B.

AU - Ma, W.

AU - Lu, Y.

AU - Polimeni, A.

N1 - Publisher Copyright: © 2020 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

PY - 2020/1/23

Y1 - 2020/1/23

N2 - We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of 1-ML-thick, H2-filled domes. The electronic properties of the curved MLs are mapped by spatially and time-resolved microphotoluminescence, revealing the mechanical stress conditions that trigger the variation of the band gap character. This general phenomenon, also observed in MoS2 and WSe2, further increases our understanding of the electronic structure of transition metal dichalcogenide MLs and holds a great relevance for their optoelectronic applications.

AB - We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of 1-ML-thick, H2-filled domes. The electronic properties of the curved MLs are mapped by spatially and time-resolved microphotoluminescence, revealing the mechanical stress conditions that trigger the variation of the band gap character. This general phenomenon, also observed in MoS2 and WSe2, further increases our understanding of the electronic structure of transition metal dichalcogenide MLs and holds a great relevance for their optoelectronic applications.

UR - https://www.scopus.com/pages/publications/85092162557

U2 - 10.1103/PhysRevResearch.2.012024

DO - 10.1103/PhysRevResearch.2.012024

M3 - Article

AN - SCOPUS:85092162557

SN - 2643-1564

VL - 2

JO - Physical Review Research

JF - Physical Review Research

IS - 1

M1 - 012024

ER -

Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2

Abstract

Access to Document

Other files and links

ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this

Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2

Abstract

Access to Document

Other files and links

Projects

ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this