Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial CaF2/Si(111) interface

J. L. Batstone, Julia M. Phillips, E. C. Hunke

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Abstract

The atomic structure at the epitaxial CaF2/Si(111) interface has been determined by high-resolution electron microscopy. As-grown layers reveal only direct Ca-Si bonding at the interface, with eightfold coordinated Ca atoms. Fluorine is preferentially removed from the interface during a rapid thermal anneal leaving fivefold coordinated Ca atoms. Removal of F results in a dramatic improvement in the electrical properties of the interface. The measured interface state density is reduced from 1013 cm-2 to 1011 cm-2.

Original languageEnglish
Pages (from-to)1394-1397
Number of pages4
JournalPhysical Review Letters
Volume60
Issue number14
DOIs
Publication statusPublished - 1988
Externally publishedYes

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