Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films

Kevin G. Orrman-Rossiter, D. R G Mitchell, S. E. Donnelly, C. J. Rossouw, S. R. Glanvill, P. R. Miller, Amir H. Al-Bayati, J. A. Van Den Berg, D. G. Armour

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Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the fundamental processes involved in thin-film growth. In these experiments layers of silicon were deposited onto (001) silicon substrates using 30 eV and 50 eV28Si+ions. This Letter reports on the use of ultramicrotomy and high-resolution transmission electron microscopy to obtain lattice images of ion- beam-deposited epitaxial silicon films. The lattice images show that film growth proceeds via a competition between epitaxial and amorphous phases, similar to island (Volmer-Weber) growth. Electron energy loss and ion scattering measurements show that, although the film is epitaxial, it contains defect structures. The lattice images indicate that a sufficient amount of the native oxide layer could be removed simply using low-energy28Si+bombardment to enable epitaxial growth. In the case of samples etched in situ by low-energy chlorine ions, initial epitaxial growth gave way to an amorphous growth phase after ͌7-5nm.

Original languageEnglish
Pages (from-to)311-318
Number of pages8
JournalPhilosophical Magazine Letters
Issue number6
Publication statusPublished - 1 Jan 1990
Externally publishedYes

Cite this

Orrman-Rossiter, K. G., Mitchell, D. R. G., Donnelly, S. E., Rossouw, C. J., Glanvill, S. R., Miller, P. R., Al-Bayati, A. H., Van Den Berg, J. A., & Armour, D. G. (1990). Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films. Philosophical Magazine Letters, 61(6), 311-318. https://doi.org/10.1080/09500839008206498