Erratum: "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors" (Applied Physics Letters (2012) 101 (093308))

Hongping Yan; Torben Schuettfort; Auke J. Kronemeijer; Christopher R. McNeill; Harald W. Ade

doi:10.1063/1.4762831

Erratum: "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors" (Applied Physics Letters (2012) 101 (093308))

Hongping Yan, Torben Schuettfort, Auke J. Kronemeijer, Christopher R. McNeill, Harald W. Ade

Materials Science & Engineering

Research output: Contribution to journal › Comment / Debate › Other › peer-review

Original language	English
Article number	179901
Number of pages	1
Journal	Applied Physics Letters
Volume	101
Issue number	17
DOIs	https://doi.org/10.1063/1.4762831
Publication status	Published - 22 Oct 2012

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10.1063/1.4762831

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title = "Erratum: {"}Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors{"} (Applied Physics Letters (2012) 101 (093308))",

author = "Hongping Yan and Torben Schuettfort and Kronemeijer, {Auke J.} and McNeill, {Christopher R.} and Ade, {Harald W.}",

year = "2012",

month = oct,

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doi = "10.1063/1.4762831",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

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Erratum: "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors" (Applied Physics Letters (2012) 101 (093308)). / Yan, Hongping; Schuettfort, Torben; Kronemeijer, Auke J. et al.
In: Applied Physics Letters, Vol. 101, No. 17, 179901, 22.10.2012.

Research output: Contribution to journal › Comment / Debate › Other › peer-review

TY - JOUR

T1 - Erratum: "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors" (Applied Physics Letters (2012) 101 (093308))

AU - Yan, Hongping

AU - Schuettfort, Torben

AU - Kronemeijer, Auke J.

AU - McNeill, Christopher R.

AU - Ade, Harald W.

PY - 2012/10/22

Y1 - 2012/10/22

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U2 - 10.1063/1.4762831

DO - 10.1063/1.4762831

M3 - Comment / Debate

AN - SCOPUS:84868035131

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 179901

ER -

Erratum: "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors" (Applied Physics Letters (2012) 101 (093308))

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Research output

Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

Cite this