Erratum: "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors" (Applied Physics Letters (2012) 101 (093308))

Hongping Yan, Torben Schuettfort, Auke J. Kronemeijer, Christopher R. McNeill, Harald W. Ade

Research output: Contribution to journalComment / DebateOtherpeer-review

Original languageEnglish
Article number179901
Number of pages1
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 22 Oct 2012

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