Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams

J. M. Poate, F. Priolo, D. C. Jacobson, J. L. Batstone, Michael O. Thompson

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Diffusion and interfacial segregation phenomena occurring in the Si amorphous-crystal system under MeV Ar ion irradiation are reviewed. Implanted Au, Ag and Cu in amorphous Si undergo radiation enhanced diffusion in the temperature range 300-700 K with Arrhenius-like behavior with activation energies of 0.37, 0.39 and 0.17 eV respectively. Segregation and trapping of Au at the amorphous-crystal interface occurs when recrystallization is induced with 2.5 MeV Ar ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces. The Au is trapped in crystalline Si at concentrations some ten orders of magnitude in excess of equilibrium concentration.

Original languageEnglish
Pages (from-to)955-959
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Issue numberC
Publication statusPublished - 2 Feb 1989
Externally publishedYes

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