Enhanced SPICE memristor model with dynamic ground

Patrick W.C. Ho, Firas Odai Hatem, Haider Abbas F. Almurib, T. Nandha Kumar

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

14 Citations (Scopus)


In this paper, an improved memristor SPICE model of [1] is presented by incorporating dynamic ground feature. Thus the proposed model enables the memristor to admit bidirectional current flow regardless of the manner it is connected to its voltage source and behaves similar to the electrical characteristics of the physical memristor. The simulation results of the proposed memristor model shows that they are in close agreement with experimental results.

Original languageEnglish
Title of host publicationProceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015
PublisherIEEE, Institute of Electrical and Electronics Engineers
Number of pages3
ISBN (Electronic)9781479917310
Publication statusPublished - 2015
Externally publishedYes
EventIEEE International Circuits and Systems Symposium 2015 - Langkawi, Malaysia
Duration: 2 Sept 20154 Sept 2015
https://ieeexplore.ieee.org/xpl/conhome/7389513/proceeding (Proceedings)


ConferenceIEEE International Circuits and Systems Symposium 2015
Abbreviated titleICSyS 2015
OtherConference changes its name from "IEEE International Conference on Circuits and Systems" (ICCAS) from 2015.

Conference is a different series to "IEEE International Symposium on Circuits and Systems" (ISCAS)
Internet address


  • memristor model
  • simulation

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