Enhanced SPICE memristor model with dynamic ground

Patrick W.C. Ho; Firas Odai Hatem; Haider Abbas F. Almurib; T. Nandha Kumar

doi:10.1109/CircuitsAndSystems.2015.7394079

Enhanced SPICE memristor model with dynamic ground

Patrick W.C. Ho, Firas Odai Hatem, Haider Abbas F. Almurib, T. Nandha Kumar

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

16 Citations (Scopus)

Abstract

In this paper, an improved memristor SPICE model of [1] is presented by incorporating dynamic ground feature. Thus the proposed model enables the memristor to admit bidirectional current flow regardless of the manner it is connected to its voltage source and behaves similar to the electrical characteristics of the physical memristor. The simulation results of the proposed memristor model shows that they are in close agreement with experimental results.

Original language	English
Title of host publication	Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	130-132
Number of pages	3
ISBN (Electronic)	9781479917310
DOIs	https://doi.org/10.1109/CircuitsAndSystems.2015.7394079
Publication status	Published - 2015
Externally published	Yes
Event	IEEE International Circuits and Systems Symposium 2015 - Langkawi, Malaysia Duration: 2 Sept 2015 → 4 Sept 2015 https://ieeexplore.ieee.org/xpl/conhome/7389513/proceeding (Proceedings)

Conference

Conference	IEEE International Circuits and Systems Symposium 2015
Abbreviated title	ICSyS 2015
Country/Territory	Malaysia
City	Langkawi
Period	2/09/15 → 4/09/15
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7389513/proceeding (Proceedings)

Keywords

memristor model
simulation
SPICE

Access to Document

10.1109/CircuitsAndSystems.2015.7394079

Cite this

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title = "Enhanced SPICE memristor model with dynamic ground",

abstract = "In this paper, an improved memristor SPICE model of [1] is presented by incorporating dynamic ground feature. Thus the proposed model enables the memristor to admit bidirectional current flow regardless of the manner it is connected to its voltage source and behaves similar to the electrical characteristics of the physical memristor. The simulation results of the proposed memristor model shows that they are in close agreement with experimental results.",

keywords = "memristor model, simulation, SPICE",

author = "Ho, {Patrick W.C.} and Hatem, {Firas Odai} and Almurib, {Haider Abbas F.} and Kumar, {T. Nandha}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; IEEE International Circuits and Systems Symposium 2015, ICSyS 2015 ; Conference date: 02-09-2015 Through 04-09-2015",

year = "2015",

doi = "10.1109/CircuitsAndSystems.2015.7394079",

language = "English",

pages = "130--132",

booktitle = "Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

url = "https://ieeexplore.ieee.org/xpl/conhome/7389513/proceeding",

}

Ho, PWC, Hatem, FO, Almurib, HAF & Kumar, TN 2015, Enhanced SPICE memristor model with dynamic ground. in Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. IEEE, Institute of Electrical and Electronics Engineers, pp. 130-132, IEEE International Circuits and Systems Symposium 2015, Langkawi, Malaysia, 2/09/15. https://doi.org/10.1109/CircuitsAndSystems.2015.7394079

Enhanced SPICE memristor model with dynamic ground. / Ho, Patrick W.C.; Hatem, Firas Odai; Almurib, Haider Abbas F. et al.
Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. IEEE, Institute of Electrical and Electronics Engineers, 2015. p. 130-132.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

TY - GEN

T1 - Enhanced SPICE memristor model with dynamic ground

AU - Ho, Patrick W.C.

AU - Hatem, Firas Odai

AU - Almurib, Haider Abbas F.

AU - Kumar, T. Nandha

PY - 2015

Y1 - 2015

N2 - In this paper, an improved memristor SPICE model of [1] is presented by incorporating dynamic ground feature. Thus the proposed model enables the memristor to admit bidirectional current flow regardless of the manner it is connected to its voltage source and behaves similar to the electrical characteristics of the physical memristor. The simulation results of the proposed memristor model shows that they are in close agreement with experimental results.

AB - In this paper, an improved memristor SPICE model of [1] is presented by incorporating dynamic ground feature. Thus the proposed model enables the memristor to admit bidirectional current flow regardless of the manner it is connected to its voltage source and behaves similar to the electrical characteristics of the physical memristor. The simulation results of the proposed memristor model shows that they are in close agreement with experimental results.

KW - memristor model

KW - simulation

KW - SPICE

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U2 - 10.1109/CircuitsAndSystems.2015.7394079

DO - 10.1109/CircuitsAndSystems.2015.7394079

M3 - Conference Paper

AN - SCOPUS:84969800871

SP - 130

EP - 132

BT - Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - IEEE International Circuits and Systems Symposium 2015

Y2 - 2 September 2015 through 4 September 2015

ER -

Enhanced SPICE memristor model with dynamic ground

Abstract

Conference

Keywords

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