Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization

Nian Jenny Jiang; Qiang Gao; Patrick Parkinson; Jennifer Wong-Leung; Sudha Mokkapati; Steffen Breuer; Hark Hoe Tan; Changlin Zheng; Joanne Etheridge; Chennupati Jagadish

doi:10.1021/nl4023385

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization

Nian Jenny Jiang, Qiang Gao, Patrick Parkinson, Jennifer Wong-Leung, Sudha Mokkapati, Steffen Breuer, Hark Hoe Tan, Changlin Zheng, Joanne Etheridge, Chennupati Jagadish

Research output: Contribution to journal › Article › Research › peer-review

95 Citations (Scopus)

Abstract

The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs heterointerface. Interdiffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion

Original language	English
Pages (from-to)	5135 - 5140
Number of pages	6
Journal	Nano Letters
Volume	13
Issue number	11
DOIs	https://doi.org/10.1021/nl4023385
Publication status	Published - 2013

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10.1021/nl4023385

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title = "Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization",

abstract = "The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs heterointerface. Interdiffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion",

author = "Jiang, {Nian Jenny} and Qiang Gao and Patrick Parkinson and Jennifer Wong-Leung and Sudha Mokkapati and Steffen Breuer and Tan, {Hark Hoe} and Changlin Zheng and Joanne Etheridge and Chennupati Jagadish",

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doi = "10.1021/nl4023385",

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journal = "Nano Letters",

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T1 - Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization

AU - Jiang, Nian Jenny

AU - Gao, Qiang

AU - Parkinson, Patrick

AU - Wong-Leung, Jennifer

AU - Mokkapati, Sudha

AU - Breuer, Steffen

AU - Tan, Hark Hoe

AU - Zheng, Changlin

AU - Etheridge, Joanne

AU - Jagadish, Chennupati

PY - 2013

Y1 - 2013

N2 - The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs heterointerface. Interdiffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion

AB - The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs heterointerface. Interdiffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion

UR - http://pubs.acs.org/doi/pdf/10.1021/nl4023385

U2 - 10.1021/nl4023385

DO - 10.1021/nl4023385

M3 - Article

SN - 1530-6984

VL - 13

SP - 5135

EP - 5140

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization

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Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization

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