Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process

N. Parvathala Reddy, Shagufta Naureen, Sudha Mokkapati, Kaushal Vora, Naeem Shahid, Fouad Karouta, Hark Hoe Tan, Chennupati Jagadish

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19 Citations (Scopus)

Abstract

We report the fabrication of GaN nanopillar arrays with good structural uniformity using the top-down approach. The photoluminescence intensity from the nanopillar arrays is enhanced compared to the epilayer. We use finite difference time domain simulations to show that the enhancement in photoluminescence intensity from the nanopillar arrays is a result of anti-reflection properties of the arrays that result in enhanced light absorption and increase light extraction efficiency compared to the epilayer. The measured quantum efficiency of the nanopillars is comparable to that of an epitaxially grown GaN epilayer.

Original languageEnglish
Article number065304
Number of pages6
JournalNanotechnology
Volume27
Issue number6
DOIs
Publication statusPublished - 13 Jan 2016
Externally publishedYes

Keywords

  • GaN nanopillars
  • photoluminescence
  • quantum efficiency
  • top-down process

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