Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes

Teng Shi, Howard E Jackson, Leigh M Smith, Nian Jiang, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Changlin Zheng, Joanne Etheridge

Research output: Contribution to journalArticleResearchpeer-review

Abstract

We use low-temperature photoluminescence, photoluminescenceexcitation, and photoluminescence imaging spectroscopyto explore the optical and electronic properties of GaAs/AlGaAsquantum well tube (QWT) heterostructured nanowires (NWs). Wefind that GaAs QWTs with widths >5 nm have electronic states whichare delocalized and continuous along the length of the NW. As theNW QWT width decreases from 5 to 1.5 nm, only a single electronstate is bound to the well, and no optical excitations to a confinedexcited state are present. Simultaneously, narrow emission lines(fwhm <600 ueV) appear which are localized to single spatial pointsalong the length of the NW. We find that these quantum-dot-likestates broaden at higher temperatures and quench at temperaturesabove 80 K. The lifetimes of these localized states are observed to varyfrom dot to dot from 160 to 400 ps. The presence of delocalized states and then localized states as the QWTs become moreconfined suggests both opportunities and challenges for possible incorporation into quantum-confined device structures.
Original languageEnglish
Pages (from-to)1876-1882
Number of pages7
JournalNano Letters
Volume15
Issue number3
DOIs
Publication statusPublished - 2015

Cite this

Shi, T., Jackson, H. E., Smith, L. M., Jiang, N., Gao, Q., Tan, H. H., ... Etheridge, J. (2015). Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes. Nano Letters, 15(3), 1876-1882. https://doi.org/10.1021/nl5046878
Shi, Teng ; Jackson, Howard E ; Smith, Leigh M ; Jiang, Nian ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, Chennupati ; Zheng, Changlin ; Etheridge, Joanne. / Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes. In: Nano Letters. 2015 ; Vol. 15, No. 3. pp. 1876-1882.
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title = "Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes",
abstract = "We use low-temperature photoluminescence, photoluminescenceexcitation, and photoluminescence imaging spectroscopyto explore the optical and electronic properties of GaAs/AlGaAsquantum well tube (QWT) heterostructured nanowires (NWs). Wefind that GaAs QWTs with widths >5 nm have electronic states whichare delocalized and continuous along the length of the NW. As theNW QWT width decreases from 5 to 1.5 nm, only a single electronstate is bound to the well, and no optical excitations to a confinedexcited state are present. Simultaneously, narrow emission lines(fwhm <600 ueV) appear which are localized to single spatial pointsalong the length of the NW. We find that these quantum-dot-likestates broaden at higher temperatures and quench at temperaturesabove 80 K. The lifetimes of these localized states are observed to varyfrom dot to dot from 160 to 400 ps. The presence of delocalized states and then localized states as the QWTs become moreconfined suggests both opportunities and challenges for possible incorporation into quantum-confined device structures.",
author = "Teng Shi and Jackson, {Howard E} and Smith, {Leigh M} and Nian Jiang and Qiang Gao and Tan, {H. Hoe} and Chennupati Jagadish and Changlin Zheng and Joanne Etheridge",
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Shi, T, Jackson, HE, Smith, LM, Jiang, N, Gao, Q, Tan, HH, Jagadish, C, Zheng, C & Etheridge, J 2015, 'Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes', Nano Letters, vol. 15, no. 3, pp. 1876-1882. https://doi.org/10.1021/nl5046878

Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes. / Shi, Teng; Jackson, Howard E; Smith, Leigh M; Jiang, Nian; Gao, Qiang; Tan, H. Hoe; Jagadish, Chennupati; Zheng, Changlin; Etheridge, Joanne.

In: Nano Letters, Vol. 15, No. 3, 2015, p. 1876-1882.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes

AU - Shi, Teng

AU - Jackson, Howard E

AU - Smith, Leigh M

AU - Jiang, Nian

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

AU - Zheng, Changlin

AU - Etheridge, Joanne

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AB - We use low-temperature photoluminescence, photoluminescenceexcitation, and photoluminescence imaging spectroscopyto explore the optical and electronic properties of GaAs/AlGaAsquantum well tube (QWT) heterostructured nanowires (NWs). Wefind that GaAs QWTs with widths >5 nm have electronic states whichare delocalized and continuous along the length of the NW. As theNW QWT width decreases from 5 to 1.5 nm, only a single electronstate is bound to the well, and no optical excitations to a confinedexcited state are present. Simultaneously, narrow emission lines(fwhm <600 ueV) appear which are localized to single spatial pointsalong the length of the NW. We find that these quantum-dot-likestates broaden at higher temperatures and quench at temperaturesabove 80 K. The lifetimes of these localized states are observed to varyfrom dot to dot from 160 to 400 ps. The presence of delocalized states and then localized states as the QWTs become moreconfined suggests both opportunities and challenges for possible incorporation into quantum-confined device structures.

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Shi T, Jackson HE, Smith LM, Jiang N, Gao Q, Tan HH et al. Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes. Nano Letters. 2015;15(3):1876-1882. https://doi.org/10.1021/nl5046878