Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography

Ke Du; Meiliana Siauw; David Valade; Marek Jasieniak; Nico Voelcker; Peter Trefonas; Jim Thackeray; Idriss Blakey; Andrew Whittaker

doi:10.1117/12.2270480

Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography

Ke Du, Meiliana Siauw, David Valade, Marek Jasieniak, Nico Voelcker, Peter Trefonas, Jim Thackeray, Idriss Blakey, Andrew Whittaker

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other › peer-review

Abstract

Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-Active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-Active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure.

Original language	English
Title of host publication	Advances in Patterning Materials and Processes XXXIV
Publisher	SPIE - International Society for Optical Engineering
Volume	10146
ISBN (Electronic)	9781510607439
DOIs	https://doi.org/10.1117/12.2270480
Publication status	Published - 2017
Externally published	Yes
Event	Advances in Patterning Materials and Processes XXXIV 2017 - San Jose, United States of America Duration: 27 Feb 2017 → 2 Mar 2017

Conference

Conference	Advances in Patterning Materials and Processes XXXIV 2017
Country/Territory	United States of America
City	San Jose
Period	27/02/17 → 2/03/17

Keywords

Embedded Barrier Layer
EUVL
OOB
RAFT polymerization

Access to Document

10.1117/12.2270480

Cite this

Du, K., Siauw, M., Valade, D., Jasieniak, M., Voelcker, N., Trefonas, P., Thackeray, J., Blakey, I., & Whittaker, A. (2017). Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography. In Advances in Patterning Materials and Processes XXXIV (Vol. 10146). Article 101460D SPIE - International Society for Optical Engineering. https://doi.org/10.1117/12.2270480

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title = "Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography",

abstract = "Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-Active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-Active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure.",

keywords = "Embedded Barrier Layer, EUVL, OOB, RAFT polymerization",

author = "Ke Du and Meiliana Siauw and David Valade and Marek Jasieniak and Nico Voelcker and Peter Trefonas and Jim Thackeray and Idriss Blakey and Andrew Whittaker",

year = "2017",

doi = "10.1117/12.2270480",

language = "English",

volume = "10146",

booktitle = "Advances in Patterning Materials and Processes XXXIV",

publisher = "SPIE - International Society for Optical Engineering",

address = "United States of America",

note = "Advances in Patterning Materials and Processes XXXIV 2017 ; Conference date: 27-02-2017 Through 02-03-2017",

}

Du, K, Siauw, M, Valade, D, Jasieniak, M, Voelcker, N, Trefonas, P, Thackeray, J, Blakey, I & Whittaker, A 2017, Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography. in Advances in Patterning Materials and Processes XXXIV. vol. 10146, 101460D, SPIE - International Society for Optical Engineering, Advances in Patterning Materials and Processes XXXIV 2017, San Jose, United States of America, 27/02/17. https://doi.org/10.1117/12.2270480

Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography. / Du, Ke; Siauw, Meiliana; Valade, David et al.
Advances in Patterning Materials and Processes XXXIV. Vol. 10146 SPIE - International Society for Optical Engineering, 2017. 101460D.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other › peer-review

TY - GEN

T1 - Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography

AU - Du, Ke

AU - Siauw, Meiliana

AU - Valade, David

AU - Jasieniak, Marek

AU - Voelcker, Nico

AU - Trefonas, Peter

AU - Thackeray, Jim

AU - Blakey, Idriss

AU - Whittaker, Andrew

PY - 2017

Y1 - 2017

N2 - Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-Active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-Active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure.

AB - Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-Active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-Active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure.

KW - Embedded Barrier Layer

KW - EUVL

KW - OOB

KW - RAFT polymerization

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DO - 10.1117/12.2270480

M3 - Conference Paper

AN - SCOPUS:85020658279

VL - 10146

BT - Advances in Patterning Materials and Processes XXXIV

PB - SPIE - International Society for Optical Engineering

T2 - Advances in Patterning Materials and Processes XXXIV 2017

Y2 - 27 February 2017 through 2 March 2017

ER -

Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography

Abstract

Conference

Keywords

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