Embedded Barrier Layer for Reducing the Effect out of Band Radiation in EUV Lithography

Ke Du, Meiliana Siauw, David Valade, Marek Jasieniak, Nico Voelcker, Peter Trefonas, Jim Thackeray, Idriss Blakey, Andrew Whittaker

Research output: Chapter in Book/Report/Conference proceedingConference PaperOtherpeer-review


Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-Active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-Active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure.

Original languageEnglish
Title of host publicationAdvances in Patterning Materials and Processes XXXIV
ISBN (Electronic)9781510607439
Publication statusPublished - 2017
Externally publishedYes
EventAdvances in Patterning Materials and Processes XXXIV 2017 - San Jose, United States of America
Duration: 27 Feb 20172 Mar 2017


ConferenceAdvances in Patterning Materials and Processes XXXIV 2017
Country/TerritoryUnited States of America
CitySan Jose


  • Embedded Barrier Layer
  • EUVL
  • OOB
  • RAFT polymerization

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