Electrostatic modulation of the electronic properties of Dirac semimetal Na3Bi thin films

Jack Hellerstedt, Indra Yudhistira, Mark T. Edmonds, Chang Liu, James Collins, Shaffique Adam, Michael S. Fuhrer

Research output: Contribution to journalArticleResearchpeer-review

4 Citations (Scopus)

Abstract

Large-area thin films of topological Dirac semimetal Na3Bi are grown on amorphous SiO2:Si substrates to realize a field-effect transistor with the doped Si acting as a back gate. As-grown films show charge carrier mobilities exceeding 7 000cm2/V s and carrier densities below 3×1018cm-3, comparable to the best thin-film Na3Bi. An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. The hole mobility is significantly larger than the electron mobility in Na3Bi which we ascribe to the inverted band structure. When present, these holes dominate the transport properties.

Original languageEnglish
Article number054203
Number of pages5
JournalPhysical Review Materials
Volume1
Issue number5
DOIs
Publication statusPublished - 30 Oct 2017

Cite this

@article{0121ea71cd524117ae3e1cde319813f4,
title = "Electrostatic modulation of the electronic properties of Dirac semimetal Na3Bi thin films",
abstract = "Large-area thin films of topological Dirac semimetal Na3Bi are grown on amorphous SiO2:Si substrates to realize a field-effect transistor with the doped Si acting as a back gate. As-grown films show charge carrier mobilities exceeding 7 000cm2/V s and carrier densities below 3×1018cm-3, comparable to the best thin-film Na3Bi. An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. The hole mobility is significantly larger than the electron mobility in Na3Bi which we ascribe to the inverted band structure. When present, these holes dominate the transport properties.",
author = "Jack Hellerstedt and Indra Yudhistira and Edmonds, {Mark T.} and Chang Liu and James Collins and Shaffique Adam and Fuhrer, {Michael S.}",
year = "2017",
month = "10",
day = "30",
doi = "10.1103/PhysRevMaterials.1.054203",
language = "English",
volume = "1",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "5",

}

Electrostatic modulation of the electronic properties of Dirac semimetal Na3Bi thin films. / Hellerstedt, Jack; Yudhistira, Indra; Edmonds, Mark T.; Liu, Chang; Collins, James; Adam, Shaffique; Fuhrer, Michael S.

In: Physical Review Materials, Vol. 1, No. 5, 054203, 30.10.2017.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Electrostatic modulation of the electronic properties of Dirac semimetal Na3Bi thin films

AU - Hellerstedt, Jack

AU - Yudhistira, Indra

AU - Edmonds, Mark T.

AU - Liu, Chang

AU - Collins, James

AU - Adam, Shaffique

AU - Fuhrer, Michael S.

PY - 2017/10/30

Y1 - 2017/10/30

N2 - Large-area thin films of topological Dirac semimetal Na3Bi are grown on amorphous SiO2:Si substrates to realize a field-effect transistor with the doped Si acting as a back gate. As-grown films show charge carrier mobilities exceeding 7 000cm2/V s and carrier densities below 3×1018cm-3, comparable to the best thin-film Na3Bi. An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. The hole mobility is significantly larger than the electron mobility in Na3Bi which we ascribe to the inverted band structure. When present, these holes dominate the transport properties.

AB - Large-area thin films of topological Dirac semimetal Na3Bi are grown on amorphous SiO2:Si substrates to realize a field-effect transistor with the doped Si acting as a back gate. As-grown films show charge carrier mobilities exceeding 7 000cm2/V s and carrier densities below 3×1018cm-3, comparable to the best thin-film Na3Bi. An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. The hole mobility is significantly larger than the electron mobility in Na3Bi which we ascribe to the inverted band structure. When present, these holes dominate the transport properties.

UR - http://www.scopus.com/inward/record.url?scp=85039441021&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.1.054203

DO - 10.1103/PhysRevMaterials.1.054203

M3 - Article

VL - 1

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 5

M1 - 054203

ER -