Electronic transport properties of Ir-decorated graphene

Yilin Wang, Shudong Xiao, Xinghan Cai, Wenzhong Bao, Janice Reutt-Robey, Michael S Fuhrer

Research output: Contribution to journalArticleResearchpeer-review

16 Citations (Scopus)

Abstract

Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7â €‰K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ∼100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.
Original languageEnglish
Article number15764
Pages (from-to)1-6
Number of pages6
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 2015

Cite this

Wang, Y., Xiao, S., Cai, X., Bao, W., Reutt-Robey, J., & Fuhrer, M. S. (2015). Electronic transport properties of Ir-decorated graphene. Scientific Reports, 5, 1-6. [15764]. https://doi.org/10.1038/srep15764
Wang, Yilin ; Xiao, Shudong ; Cai, Xinghan ; Bao, Wenzhong ; Reutt-Robey, Janice ; Fuhrer, Michael S. / Electronic transport properties of Ir-decorated graphene. In: Scientific Reports. 2015 ; Vol. 5. pp. 1-6.
@article{f9c38486c2a44405a66477555e20e131,
title = "Electronic transport properties of Ir-decorated graphene",
abstract = "Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7{\^a} €‰K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ∼100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.",
author = "Yilin Wang and Shudong Xiao and Xinghan Cai and Wenzhong Bao and Janice Reutt-Robey and Fuhrer, {Michael S}",
year = "2015",
doi = "10.1038/srep15764",
language = "English",
volume = "5",
pages = "1--6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Wang, Y, Xiao, S, Cai, X, Bao, W, Reutt-Robey, J & Fuhrer, MS 2015, 'Electronic transport properties of Ir-decorated graphene', Scientific Reports, vol. 5, 15764, pp. 1-6. https://doi.org/10.1038/srep15764

Electronic transport properties of Ir-decorated graphene. / Wang, Yilin; Xiao, Shudong; Cai, Xinghan; Bao, Wenzhong; Reutt-Robey, Janice; Fuhrer, Michael S.

In: Scientific Reports, Vol. 5, 15764, 2015, p. 1-6.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Electronic transport properties of Ir-decorated graphene

AU - Wang, Yilin

AU - Xiao, Shudong

AU - Cai, Xinghan

AU - Bao, Wenzhong

AU - Reutt-Robey, Janice

AU - Fuhrer, Michael S

PY - 2015

Y1 - 2015

N2 - Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7â €‰K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ∼100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.

AB - Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7â €‰K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ∼100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.

UR - http://www.nature.com/articles/srep15764

U2 - 10.1038/srep15764

DO - 10.1038/srep15764

M3 - Article

VL - 5

SP - 1

EP - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 15764

ER -