Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O 3 thin film cantilevers fabricated by micromachining

Meysam Sharifzadeh Mirshekarloo, Lei Zhang, Kui Yao, Thirumany Sritharan

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

Electromechanical cantilevers comprising antiferroelectric (Pb, La) (Zr, Sn, Ti)O 3 (PLZST) thin films were fabricated through bulk micro-machining process on silicon wafers, and their electromechanical properties including strain-fatigue behaviors of the antiferroelectric thin film cantilevers were investigated. The antiferroelectric cantilevers showed the distinct digital actuation characteristics with the strain generated due to the antiferroelectric-ferroelectric transformation. The maximum displacement per unit voltage around the phase switching field reached 16.7 μm/V, significantly larger than the typical piezoelectric cantilevers. Moreover, the antiferroelectric PLZST cantilevers exhibited superior strain-fatigue resistance compared to the similar piezoelectric microstructures. These results show the promising future of antiferroelectric materials in micro electromechanical systems.

Original languageEnglish
Pages (from-to)127-131
Number of pages5
JournalSensors and Actuators, A: Physical
Volume187
DOIs
Publication statusPublished - 1 Nov 2012
Externally publishedYes

Keywords

  • Actuator
  • Antiferroelectric thin films
  • MEMS
  • PLZST
  • Strain fatigue

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