Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 1093-1100 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 61 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2014 |
| Externally published | Yes |
Cite this
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Electrically stable, solution-processed amorphous oxide IZO thin-film transistors through a UV-ozone assisted sol-gel approach. / Singh, Thokchom Birendra; Jasieniak, Jacek Jaroslaw; Tozi, Leonardo de Oliveira; Easton, Christopher David; Bown, Mark.
In: IEEE Transactions on Electron Devices, Vol. 61, No. 4, 04.2014, p. 1093-1100.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - Electrically stable, solution-processed amorphous oxide IZO thin-film transistors through a UV-ozone assisted sol-gel approach
AU - Singh, Thokchom Birendra
AU - Jasieniak, Jacek Jaroslaw
AU - Tozi, Leonardo de Oliveira
AU - Easton, Christopher David
AU - Bown, Mark
PY - 2014/4
Y1 - 2014/4
N2 - Metal acetylacetonates are conventional sol-gel precursors used to deposit thin amorphous metal oxide films of In-Zn-O (IZO) suitable for thin-film field effect transistors (TFTs). In this paper, we couple this traditional approach with a postdeposition UV-ozone treatment to effectively reduce carbon impurities prior to any thermal treatment steps. Therefore, we find that the rate of bulk metal oxide formation is enhanced, thus enabling a significant reduction of the processing temperature necessary to achieve high-mobility transistors. Optimized TFT structures processed at 300?C show n-type mobility of 35 cm 2/Vs with on and off ratio of 107. Moreover, positive bias stress tests of such devices are found to exhibit one the lowest threshold voltage shifts of any solution-processed amorphous TFT fabricated without a passivation layer.
AB - Metal acetylacetonates are conventional sol-gel precursors used to deposit thin amorphous metal oxide films of In-Zn-O (IZO) suitable for thin-film field effect transistors (TFTs). In this paper, we couple this traditional approach with a postdeposition UV-ozone treatment to effectively reduce carbon impurities prior to any thermal treatment steps. Therefore, we find that the rate of bulk metal oxide formation is enhanced, thus enabling a significant reduction of the processing temperature necessary to achieve high-mobility transistors. Optimized TFT structures processed at 300?C show n-type mobility of 35 cm 2/Vs with on and off ratio of 107. Moreover, positive bias stress tests of such devices are found to exhibit one the lowest threshold voltage shifts of any solution-processed amorphous TFT fabricated without a passivation layer.
U2 - 10.1109/TED.2014.2303796
DO - 10.1109/TED.2014.2303796
M3 - Article
VL - 61
SP - 1093
EP - 1100
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
ER -