TY - JOUR
T1 - Electrically stable, solution-processed amorphous oxide IZO thin-film transistors through a UV-ozone assisted sol-gel approach
AU - Singh, Thokchom Birendra
AU - Jasieniak, Jacek Jaroslaw
AU - Tozi, Leonardo de Oliveira
AU - Easton, Christopher David
AU - Bown, Mark
PY - 2014/4
Y1 - 2014/4
N2 - Metal acetylacetonates are conventional sol-gel precursors used to deposit thin amorphous metal oxide films of In-Zn-O (IZO) suitable for thin-film field effect transistors (TFTs). In this paper, we couple this traditional approach with a postdeposition UV-ozone treatment to effectively reduce carbon impurities prior to any thermal treatment steps. Therefore, we find that the rate of bulk metal oxide formation is enhanced, thus enabling a significant reduction of the processing temperature necessary to achieve high-mobility transistors. Optimized TFT structures processed at 300?C show n-type mobility of 35 cm 2/Vs with on and off ratio of 107. Moreover, positive bias stress tests of such devices are found to exhibit one the lowest threshold voltage shifts of any solution-processed amorphous TFT fabricated without a passivation layer.
AB - Metal acetylacetonates are conventional sol-gel precursors used to deposit thin amorphous metal oxide films of In-Zn-O (IZO) suitable for thin-film field effect transistors (TFTs). In this paper, we couple this traditional approach with a postdeposition UV-ozone treatment to effectively reduce carbon impurities prior to any thermal treatment steps. Therefore, we find that the rate of bulk metal oxide formation is enhanced, thus enabling a significant reduction of the processing temperature necessary to achieve high-mobility transistors. Optimized TFT structures processed at 300?C show n-type mobility of 35 cm 2/Vs with on and off ratio of 107. Moreover, positive bias stress tests of such devices are found to exhibit one the lowest threshold voltage shifts of any solution-processed amorphous TFT fabricated without a passivation layer.
U2 - 10.1109/TED.2014.2303796
DO - 10.1109/TED.2014.2303796
M3 - Article
SN - 0018-9383
VL - 61
SP - 1093
EP - 1100
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
ER -