Electrical probing of single-wall carbon nanotubes suspended over trenches

Alma E. Wickenden, Todd Brintlinger, Michael S. Fuhrer

Research output: Chapter in Book/Report/Conference proceedingConference PaperOtherpeer-review


Transport characterization of individual suspended single-wall carbon nanotubes (CNTs), spanning 50μm deep trenches and having lengths of up to 100μm, has been performed using a nanoprobe configuration in a scanning electron microscope (SEM). This configuration provides direct electrical contact to, and mechanical manipulation of, the CNT. The carbon nanotubes are grown from catalyst on the insulating SiO2 surface of the trench structure via chemical vapor deposition, and span the trenches in the gas flow direction. This approach provides a fundamental investigation of the intrinsic transport properties of the nanotubes without disorder induced by the substrate or chemical residues from conventional lithographic patterning processes. The suspended CNTs are probed in an SEM chamber, and the use of a mobile probe as a gate electrode allows identification of metallic and semiconducting nanotubes. The ability of in-situ manipulation of the CNTs using the probes allows characterization of both unstressed (straight) and stressed (bent) CNTs. Details of the growth and fabrication procedures and characterization of transport on these long, suspended CNTs will be presented.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Number of pages1
Publication statusPublished - 1 Dec 2005
Externally publishedYes
EventIEEE International Conference on Nanotechnology 2005 - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005
Conference number: 5th
https://ieeexplore.ieee.org/xpl/conhome/10038/proceeding (Proceedings)

Publication series

Name2005 5th IEEE Conference on Nanotechnology


ConferenceIEEE International Conference on Nanotechnology 2005
Abbreviated titleIEEE-NANO 2005
Internet address


  • Carbon nanotubes
  • Nanoelectronics
  • Nanotechnology
  • Transport

Cite this