Electrical conductivity as a measure of the continuity of titanium and vanadium thin films

F. A. Burgmann, S. H.N. Lim, D. G. McCulloch, B. K. Gan, K. E. Davies, David Robert McKenzie, M. M.M. Bilek

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

We investigate titanium (Ti) and vanadium (V) film growth on amorphous carbon (a-C) and silicon oxide (SiO2) substrates using in situ electrical conductivity measurements and electron microscopy. The aim is to determine the minimum thickness of a continuous layer so that multilayer coatings of fine period can be constructed. We applied a model for thin film metallic conduction to develop a criterion for the onset of electrical continuity. We found that this onset coincides with the minimum in a curve of Rt2 as a function t, where R is the film resistance and t is the film thickness. For these film/substrate combinations, we found minimum layer thicknesses of between 2.5 and 3 nm are possible.

Original languageEnglish
Pages (from-to)341-345
Number of pages5
JournalThin Solid Films
Volume474
Issue number1-2
DOIs
Publication statusPublished - 1 Mar 2005
Externally publishedYes

Keywords

  • Electrical properties and measurements
  • Growth mechanism
  • Titanium
  • Vanadium

Cite this