Electric-field-dependent charge-carrier velocity in semiconducting carbon nanotubes

Yung Fu Chen, M. S. Fuhrer

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Abstract

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25μA, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity-saturation model with a saturation velocity of 2×107cm/s.

Original languageEnglish
Article number236803
JournalPhysical Review Letters
Volume95
Issue number23
DOIs
Publication statusPublished - 2 Dec 2005
Externally publishedYes

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