Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

Xiaojing Hao, Eun-Chel Cho, Giuseppe Scardera, Edith Bellet-Amalric, Daniel Roland Bellet, Yansong Shen, Shujuan Huang, Yidan Huang, Gavin Conibeer, Martin Andrew Green

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Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 degrees C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature
Original languageEnglish
Pages (from-to)5646 - 5652
Number of pages7
JournalThin Solid Films
Issue number19
Publication statusPublished - 2009
Externally publishedYes

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