Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

B  Gupta; I. Di Bernardo; P. Mondelli; A. Della Pia; M. G. Betti; F. Iacopi; C. Mariani; N. Motta

doi:10.1088/0957-4484/27/18/185601

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

B Gupta, I. Di Bernardo, P. Mondelli, A. Della Pia, M. G. Betti, F. Iacopi, C. Mariani, N. Motta

Research output: Contribution to journal › Article › Research › peer-review

12 Citations (Scopus)

Abstract

We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.

Original language	English
Article number	185601
Number of pages	10
Journal	Nanotechnology
Volume	27
Issue number	18
DOIs	https://doi.org/10.1088/0957-4484/27/18/185601
Publication status	Published - 21 Mar 2016
Externally published	Yes

Keywords

annealing
epitaxial growth
graphene
polishing
SiC

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title = "Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing",

abstract = "We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.",

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T1 - Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

AU - Gupta, B

AU - Di Bernardo, I.

AU - Mondelli, P.

AU - Della Pia, A.

AU - Betti, M. G.

AU - Iacopi, F.

AU - Mariani, C.

AU - Motta, N.

PY - 2016/3/21

Y1 - 2016/3/21

N2 - We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.

AB - We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.

KW - annealing

KW - epitaxial growth

KW - graphene

KW - polishing

KW - SiC

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DO - 10.1088/0957-4484/27/18/185601

M3 - Article

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SN - 0957-4484

VL - 27

JO - Nanotechnology

JF - Nanotechnology

IS - 18

M1 - 185601

ER -

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

Abstract

Keywords

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