Effect of praseodymium salt on properties of anodic aluminum oxide films

Xiaozhen Liu, Zhaoxin Liu, Aibing Yu, Gang Wang, Lingling Song, Leqi Ding

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

2 Citations (Scopus)

Abstract

Praseodymium salt was used as additives for the first time in preparing anodic aluminum oxide (AAO) films to improve its performance. AAO films were prepared by anodization method from a 15 vol. sulphuric acid solution containing praseodymium salt. The effects of Pr concentration on microhardness and thickness of AAO film were investigated, respectively. The effect of heat treatment temperature on structure of AAO film was investigated. AAO films were characterized by XRD, EDAX and SEM techniques. AAO films showed higher microhardness and thickness, the surface of AAO film was smoother and the aperture of AAO film was more uniform than those of films prepared in 15 vol. sulphuric acid anodization solution. The microhardness and thickness of AAO film were 355.7HV and 84?m respectively. The apertures of AAO film were in 25 30nm. There was not praseodymium in AAO film. AAO films were amorphous when heat treatment temperatures of AAO film were below 800?C. When heat treatment temperature of AAO film were 850?C and 1000?C respectively, AAO films were ?-Al 2O 3 and a-Al 2O 3 film respectively.
Original languageEnglish
Title of host publication2011 International Conference on Chemical, Material and Metallurgical Engineering (ICCMME 2011)
EditorsJianmin Zeng, Yun-Hae Kim, Yanfeng Chen
Place of PublicationStafa-Zurich Switzerland
PublisherTrans Tech Publications
Pages847 - 850
Number of pages4
Volume399-401
ISBN (Print)1022-6680
DOIs
Publication statusPublished - 2012
Externally publishedYes
EventInternational Conference on Chemical, Material and Metallurgical Engineering (ICCMME 2011) - Beihai, China
Duration: 23 Dec 201125 Dec 2011

Conference

ConferenceInternational Conference on Chemical, Material and Metallurgical Engineering (ICCMME 2011)
Abbreviated titleICCMME 2011
CountryChina
CityBeihai
Period23/12/1125/12/11

Cite this