Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes

M. Aimadeddine; V. Arnal; D. Roy; A. Farcy; T. David; T. Chevolleau; N. Possémé; J. Vitiello; L. L. Chapelon; C. Guedj; Y. Brechet; F. Volpi; J. Torres

doi:10.1109/IITC.2006.1648652

Effect of CH₄ plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes

M. Aimadeddine, V. Arnal, D. Roy, A. Farcy, T. David, T. Chevolleau, N. Possémé, J. Vitiello, L. L. Chapelon, C. Guedj, Y. Brechet, F. Volpi, J. Torres

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

13 Citations (Scopus)

Abstract

Patterning and ashing are known to be critical steps to the integration of porous ultra low-k dielectrics in interconnects, mainly due to low-k damage during these processes. In this paper, we investigate the impact of a new methane based ash chemistry on the sidewall modification of the porous dielectric. Physical and electrical characterizations of the integrated low-k evidence a sealing effect of CH₄ plasma on dielectric sidewalls as well as a gain in reliability compared to other known plasma chemistries. The impact of CH₄ chemistry on leakage mechanism is also investigated.

Original language	English
Title of host publication	2006 International Interconnect Technology Conference, IITC
Pages	81-83
Number of pages	3
DOIs	https://doi.org/10.1109/IITC.2006.1648652
Publication status	Published - 2006
Externally published	Yes
Event	International Interconnect Technology Conference 2006 - Burlingame, United States of America Duration: 5 Jun 2006 → 7 Jun 2006

Publication series

Name	2006 International Interconnect Technology Conference, IITC

Conference

Conference	International Interconnect Technology Conference 2006
Abbreviated title	IITC 2006
Country/Territory	United States of America
City	Burlingame
Period	5/06/06 → 7/06/06

Access to Document

10.1109/IITC.2006.1648652

Cite this

Aimadeddine, M., Arnal, V., Roy, D., Farcy, A., David, T., Chevolleau, T., Possémé, N., Vitiello, J., Chapelon, L. L., Guedj, C., Brechet, Y., Volpi, F., & Torres, J. (2006). Effect of CH₄ plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes. In 2006 International Interconnect Technology Conference, IITC (pp. 81-83). Article 1648652 (2006 International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2006.1648652

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title = "Effect of CH4 plasma on porous dielectric modification \& pore sealing for advanced interconnect technology nodes",

abstract = "Patterning and ashing are known to be critical steps to the integration of porous ultra low-k dielectrics in interconnects, mainly due to low-k damage during these processes. In this paper, we investigate the impact of a new methane based ash chemistry on the sidewall modification of the porous dielectric. Physical and electrical characterizations of the integrated low-k evidence a sealing effect of CH4 plasma on dielectric sidewalls as well as a gain in reliability compared to other known plasma chemistries. The impact of CH4 chemistry on leakage mechanism is also investigated.",

author = "M. Aimadeddine and V. Arnal and D. Roy and A. Farcy and T. David and T. Chevolleau and N. Poss{\'e}m{\'e} and J. Vitiello and Chapelon, \{L. L.\} and C. Guedj and Y. Brechet and F. Volpi and J. Torres",

year = "2006",

doi = "10.1109/IITC.2006.1648652",

language = "English",

isbn = "1424401038",

series = "2006 International Interconnect Technology Conference, IITC",

pages = "81--83",

booktitle = "2006 International Interconnect Technology Conference, IITC",

note = "International Interconnect Technology Conference 2006, IITC 2006 ; Conference date: 05-06-2006 Through 07-06-2006",

}

Aimadeddine, M, Arnal, V, Roy, D, Farcy, A, David, T, Chevolleau, T, Possémé, N, Vitiello, J, Chapelon, LL, Guedj, C, Brechet, Y, Volpi, F & Torres, J 2006, Effect of CH₄ plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes. in 2006 International Interconnect Technology Conference, IITC., 1648652, 2006 International Interconnect Technology Conference, IITC, pp. 81-83, International Interconnect Technology Conference 2006, Burlingame, California, United States of America, 5/06/06. https://doi.org/10.1109/IITC.2006.1648652

Effect of CH₄ plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes. / Aimadeddine, M.; Arnal, V.; Roy, D. et al.
2006 International Interconnect Technology Conference, IITC. 2006. p. 81-83 1648652 (2006 International Interconnect Technology Conference, IITC).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

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T1 - Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes

AU - Aimadeddine, M.

AU - Arnal, V.

AU - Roy, D.

AU - Farcy, A.

AU - David, T.

AU - Chevolleau, T.

AU - Possémé, N.

AU - Vitiello, J.

AU - Chapelon, L. L.

AU - Guedj, C.

AU - Brechet, Y.

AU - Volpi, F.

AU - Torres, J.

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N2 - Patterning and ashing are known to be critical steps to the integration of porous ultra low-k dielectrics in interconnects, mainly due to low-k damage during these processes. In this paper, we investigate the impact of a new methane based ash chemistry on the sidewall modification of the porous dielectric. Physical and electrical characterizations of the integrated low-k evidence a sealing effect of CH4 plasma on dielectric sidewalls as well as a gain in reliability compared to other known plasma chemistries. The impact of CH4 chemistry on leakage mechanism is also investigated.

AB - Patterning and ashing are known to be critical steps to the integration of porous ultra low-k dielectrics in interconnects, mainly due to low-k damage during these processes. In this paper, we investigate the impact of a new methane based ash chemistry on the sidewall modification of the porous dielectric. Physical and electrical characterizations of the integrated low-k evidence a sealing effect of CH4 plasma on dielectric sidewalls as well as a gain in reliability compared to other known plasma chemistries. The impact of CH4 chemistry on leakage mechanism is also investigated.

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