Effect of chemical order on the magnetic and electronic properties of epitaxial off-stoichiometry FexSi1-x thin films

J. Karel, J. Juraszek, J. Minar, C. Bordel, K. H. Stone, Y. N Zhang, J. Hu, R. Q. Wu, H. Ebert, J. B. Kortright, F. Hellman

Research output: Contribution to journalArticleResearchpeer-review

22 Citations (Scopus)

Abstract

Off-stoichiometry, epitaxial FexSi1-x thin films (0.5 < x < 1.0) exhibit D03 or B2 chemical order, even far from stoichiometry. Theoretical calculations show the magnetic moment is strongly enhanced in the fully chemically disordered A2 phase, while both theoretical and experimental results show that the magnetization is nearly the same in the B2 and D03 phases, meaning partial chemical disorder does not influence the magnetism. The dependencies of the magnetic moments are directly and nonlinearly linked to the number of Si atoms, primarily nearest neighbor but also to a lesser extent (up to 10%) next nearest neighbor, surrounding Fe, explaining the similarities between B2 and D03 and the strong enhancement for the A2 structure. The calculated electronic density of states shows many similarities in both structure and spin polarization between the D03 and B2 structures, while the A2 structure exhibits disorder broadening and a reduced spin polarization.

Original languageEnglish
Article number144402
Number of pages9
JournalPhysical Review B
Volume91
Issue number14
DOIs
Publication statusPublished - 6 Apr 2015
Externally publishedYes

Cite this

Karel, J., Juraszek, J., Minar, J., Bordel, C., Stone, K. H., Zhang, Y. N., Hu, J., Wu, R. Q., Ebert, H., Kortright, J. B., & Hellman, F. (2015). Effect of chemical order on the magnetic and electronic properties of epitaxial off-stoichiometry FexSi1-x thin films. Physical Review B, 91(14), [144402]. https://doi.org/10.1103/PhysRevB.91.144402