Effect of a third element on the stability of NiSi thin films on Si

Dominique Mangelinck; J. Philibert; B. Baretzky; A. Gusak; H. Mehrer; A. Aleshin; Y. Brechet; B. Bokstein

doi:10.4028/3-908451-17-5.127

Effect of a third element on the stability of NiSi thin films on Si

Dominique Mangelinck, J. Philibert, B. Baretzky, A. Gusak, H. Mehrer, A. Aleshin, Y. Brechet, B. Bokstein

Materials Science & Engineering

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900°C leading to a better stability of NiSi at high temperatures. For Ni films on Si_1-xGe_x with x=0.29 and 0.58, no NiSi₂ was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.

Original language	English
Pages (from-to)	127-134
Number of pages	8
Journal	Defect and Diffusion Forum
Volume	249
DOIs	https://doi.org/10.4028/3-908451-17-5.127
Publication status	Published - 2006

Keywords

Germanium
Nickel
Nucleation
Platinum
Stability
Suicide
Ternary phase diagram

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.4028/3-908451-17-5.127

Cite this

@article{d5930dfa5a2f49d08a00d3583e39ca74,

title = "Effect of a third element on the stability of NiSi thin films on Si",

abstract = "The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900°C leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.",

keywords = "Germanium, Nickel, Nucleation, Platinum, Stability, Suicide, Ternary phase diagram",

author = "Dominique Mangelinck and J. Philibert and B. Baretzky and A. Gusak and H. Mehrer and A. Aleshin and Y. Brechet and B. Bokstein",

year = "2006",

doi = "10.4028/3-908451-17-5.127",

language = "English",

volume = "249",

pages = "127--134",

journal = "Defect and Diffusion Forum",

issn = "1012-0386",

publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Effect of a third element on the stability of NiSi thin films on Si

AU - Mangelinck, Dominique

AU - Philibert, J.

AU - Baretzky, B.

AU - Gusak, A.

AU - Mehrer, H.

AU - Aleshin, A.

AU - Brechet, Y.

AU - Bokstein, B.

PY - 2006

Y1 - 2006

N2 - The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900°C leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.

AB - The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900°C leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.

KW - Germanium

KW - Nickel

KW - Nucleation

KW - Platinum

KW - Stability

KW - Suicide

KW - Ternary phase diagram

UR - http://www.scopus.com/inward/record.url?scp=33645375920&partnerID=8YFLogxK

U2 - 10.4028/3-908451-17-5.127

DO - 10.4028/3-908451-17-5.127

M3 - Article

AN - SCOPUS:33645375920

SN - 1012-0386

VL - 249

SP - 127

EP - 134

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

ER -

Effect of a third element on the stability of NiSi thin films on Si

Abstract

Keywords

UN SDGs

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