Abstract
A new technique for modelling DFB semiconductor lasers above threshold using scattering matrices is described. Quarter-wave-shifted grating devices are compared with unshifted devices under transient conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 1307-1308 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 25 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 1 Sept 1989 |
| Externally published | Yes |
Keywords
- Modelling
- Semiconductor lasers
- Transmission lines
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