Abstract
A double layer ARC for a GaAsP/SiGe tandem cell on Si is designed with a transfer matrix model. The importance of considering window thickness and material to be variable parameters in both design optimization and robustness investigation is demonstrated. In this process, optical constants of GaAs.84P.16, Ga.59In.41P, and Al.65In.35P are measured and used to estimate non-zero collection probability in the window layer. Experimental deposition of the ARC verifies the model and achieves a Spectral Weighted Reflectance of 1.9 %. Further modeling will better define the collection probability and suggest additional strategies for device efficiency improvement.
Original language | English |
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Title of host publication | 2014 IEEE 40th Photovoltaic Specialist Conference |
Editors | Angèle Reinders |
Place of Publication | Piscataway NJ USA |
Publisher | IEEE, Institute of Electrical and Electronics Engineers |
Pages | 1143-1147 |
Number of pages | 5 |
ISBN (Electronic) | 9781479943982 |
ISBN (Print) | 9781479943999 |
DOIs | |
Publication status | Published - 2014 |
Externally published | Yes |
Event | IEEE Photovoltaic Specialists Conference 2014 - Denver, United States of America Duration: 8 Jun 2014 → 13 Jun 2014 Conference number: 40th https://ieeexplore.ieee.org/xpl/conhome/6912652/proceeding (Proceedings - Part 1) https://ieeexplore.ieee.org/xpl/conhome/7587802/proceeding (Proceedings - Part 2) |
Conference
Conference | IEEE Photovoltaic Specialists Conference 2014 |
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Abbreviated title | PVSC 2014 |
Country/Territory | United States of America |
City | Denver |
Period | 8/06/14 → 13/06/14 |
Internet address |
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Keywords
- III-V semiconductor materials
- optical design
- optical variables measurement
- photovoltaic cells
- thin films