Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Zhe Li, Christopher R. Hall, Jeffrey A. Davis, Yuda Wang, Leigh M. Smith, Lan Fu, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish

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Abstract

Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications.

Original languageEnglish
Article number11927
Number of pages7
JournalNature Communications
Volume7
DOIs
Publication statusPublished - 17 Jun 2016
Externally publishedYes

Cite this

Burgess, T., Saxena, D., Mokkapati, S., Li, Z., Hall, C. R., Davis, J. A., Wang, Y., Smith, L. M., Fu, L., Caroff, P., Tan, H. H., & Jagadish, C. (2016). Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires. Nature Communications, 7, [11927]. https://doi.org/10.1038/ncomms11927