Doping Engineering of Single-Walled Carbon Nanotubes by Nitrogen Compounds Using Basicity and Alignment

Bogumiła Kumanek, Karolina Z. Milowska, Łukasz Przypis, Grzegorz Stando, Karolina Matuszek, Douglas Macfarlane, Mike C. Payne, Dawid Janas

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Charge transport properties in single-walled carbon nanotubes (SWCNTs) can be significantly modified through doping, tuning their electrical and thermoelectric properties. In our study, we used more than 40 nitrogen-bearing compounds as dopants and determined their impact on the material's electrical conductivity. The application of nitrogen compounds of diverse structures and electronic configurations enabled us to determine how the dopant nature affects the SWCNTs. The results reveal that the impact of these dopants can often be anticipated by considering their Hammett's constants and pKavalues. Furthermore, the empirical observations supported by first-principles calculations indicate that the doping level can be tuned not only by changing the type and the concentration of dopants but also by varying the orientation of nitrogen compounds around SWCNTs.

Original languageEnglish
Pages (from-to)25861-25877
Number of pages17
JournalACS Applied Materials & Interfaces
Volume14
Issue number22
DOIs
Publication statusPublished - 8 Jun 2022

Keywords

  • carbon nanotubes
  • doping
  • electrical properties
  • nitrogen compounds
  • thermoelectric properties

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