Direct silicon bonding dynamics: A coupled fluid/structure analysis

E. Navarro; Y. Bréchet; R. Moreau; T. Pardoen; J. P. Raskin; A. Barthelemy; I. Radu

doi:10.1063/1.4813312

Direct silicon bonding dynamics: A coupled fluid/structure analysis

E. Navarro, Y. Bréchet, R. Moreau, T. Pardoen, J. P. Raskin, A. Barthelemy, I. Radu

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence.

Original language	English
Article number	034104
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4813312
Publication status	Published - 15 Jul 2013
Externally published	Yes

Access to Document

10.1063/1.4813312

Link to publication in Scopus

Cite this

@article{1eb4c0b017dd450d87177f71ab5d2958,

title = "Direct silicon bonding dynamics: A coupled fluid/structure analysis",

abstract = "During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence.",

author = "E. Navarro and Y. Br{\'e}chet and R. Moreau and T. Pardoen and Raskin, {J. P.} and A. Barthelemy and I. Radu",

year = "2013",

month = jul,

day = "15",

doi = "10.1063/1.4813312",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "3",

}

TY - JOUR

T1 - Direct silicon bonding dynamics

T2 - A coupled fluid/structure analysis

AU - Navarro, E.

AU - Bréchet, Y.

AU - Moreau, R.

AU - Pardoen, T.

AU - Raskin, J. P.

AU - Barthelemy, A.

AU - Radu, I.

PY - 2013/7/15

Y1 - 2013/7/15

N2 - During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence.

AB - During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence.

UR - http://www.scopus.com/inward/record.url?scp=84881526137&partnerID=8YFLogxK

U2 - 10.1063/1.4813312

DO - 10.1063/1.4813312

M3 - Article

AN - SCOPUS:84881526137

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 034104

ER -