Direct silicon bonding dynamics: A coupled fluid/structure analysis

E. Navarro, Y. Bréchet, R. Moreau, T. Pardoen, J. P. Raskin, A. Barthelemy, I. Radu

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7 Citations (Scopus)

Abstract

During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence.

Original languageEnglish
Article number034104
JournalApplied Physics Letters
Volume103
Issue number3
DOIs
Publication statusPublished - 15 Jul 2013
Externally publishedYes

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