TY - JOUR
T1 - Dirac-source diode with sub-unity ideality factor
AU - Myeong, Gyuho
AU - Shin, Wongil
AU - Sung, Kyunghwan
AU - Kim, Seungho
AU - Lim, Hongsik
AU - Kim, Boram
AU - Jin, Taehyeok
AU - Park, Jihoon
AU - Lee, Taehun
AU - Fuhrer, Michael S.
AU - Watanabe, Kenji
AU - Taniguchi, Takashi
AU - Liu, Fei
AU - Cho, Sungjae
N1 - Funding Information:
We thank J. Lee for the helpful discussions. S.C. acknowledges support from Korea NRF (Grant Nos. 2020M3F3A2A01081899, and 2020R1A2C2100258). F.L. acknowledges support from NSFC (Grant No. 61974003) and the 111 Project (Grant No. B18001). M.S.F. acknowledge support from the ARC (CE17010039).
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/12
Y1 - 2022/12
N2 - An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power rectifier, able to overcome the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode based on graphene/MoS2/graphite van der Waals heterostructures, which exhibits a steep-slope characteristic curve, by exploiting the linear density of states (DOSs) of graphene. For the developed DS diode, we obtained η < 1 for more than four decades of drain current (ηave_4dec < 1) with a minimum value of 0.8, and a rectifying ratio exceeding 108. The realisation of a DS diode represents an additional step towards the development of low-power electronic circuits.
AB - An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power rectifier, able to overcome the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode based on graphene/MoS2/graphite van der Waals heterostructures, which exhibits a steep-slope characteristic curve, by exploiting the linear density of states (DOSs) of graphene. For the developed DS diode, we obtained η < 1 for more than four decades of drain current (ηave_4dec < 1) with a minimum value of 0.8, and a rectifying ratio exceeding 108. The realisation of a DS diode represents an additional step towards the development of low-power electronic circuits.
UR - http://www.scopus.com/inward/record.url?scp=85135072745&partnerID=8YFLogxK
U2 - 10.1038/s41467-022-31849-5
DO - 10.1038/s41467-022-31849-5
M3 - Article
C2 - 35882859
AN - SCOPUS:85135072745
SN - 2041-1723
VL - 13
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 4328
ER -