Single source chemical vapour deposition (SSCVD) is a useful technique for preparing thin films, offering the simplicity of having all film components contained within the one molecule. However, the molecules currently used for SSCVD of MgO films are inconvenient due to high reactivity or expense. We report here the application of a novel hexameric diethylcarbamato complex Mg 6(O2CNEt2)12 (1) as a single source precursor for MgO deposition. This precursor is simple to prepare, and has suitable volatility at moderate temperatures. SSCVD using 1 deposits high quality MgO films at deposition temperatures near 500 °C. Film analysis by XPS, XRD and SEM revealed a low carbon contamination and a film morphology that makes it suitable for use as a buffer layer between substrates and perovskite thin film coatings in electronic device construction.