Development of an MeV ion beam lithography system in Jyväskylä

Sergey Gorelick, Tommi Ylimäki, Timo Sajavaara, Mikko Laitinen, A. Sagari, Harry J. Whitlow

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A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyväskylä cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1
Publication statusPublished - 1 Jul 2007
Externally publishedYes


  • Cyclotron
  • MeV ion beam lithography
  • Proton beam writing
  • Proximity aperture

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