Development of an MeV ion beam lithography system in Jyväskylä

Sergey Gorelick; Tommi Ylimäki; Timo Sajavaara; Mikko Laitinen; A. Sagari; Harry J. Whitlow

doi:10.1016/j.nimb.2007.01.260

Development of an MeV ion beam lithography system in Jyväskylä

Sergey Gorelick, Tommi Ylimäki, Timo Sajavaara, Mikko Laitinen, A. Sagari, Harry J. Whitlow

Research output: Contribution to journal › Article › Research › peer-review

20 Citations (Scopus)

Abstract

A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyväskylä cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 μm side with protons up to 6 MeV and heavy ions (²⁰Ne, ⁸⁵Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	260
Issue number	1
DOIs	https://doi.org/10.1016/j.nimb.2007.01.260
Publication status	Published - 1 Jul 2007
Externally published	Yes

Keywords

Cyclotron
MeV ion beam lithography
Proton beam writing
Proximity aperture

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10.1016/j.nimb.2007.01.260

Cite this

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abstract = "A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyv{\"a}skyl{\"a} cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.",

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AU - Gorelick, Sergey

AU - Ylimäki, Tommi

AU - Sajavaara, Timo

AU - Laitinen, Mikko

AU - Sagari, A.

AU - Whitlow, Harry J.

PY - 2007/7/1

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AB - A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyväskylä cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

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KW - MeV ion beam lithography

KW - Proton beam writing

KW - Proximity aperture

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Development of an MeV ion beam lithography system in Jyväskylä

Abstract

Keywords

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