A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyväskylä cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 1 Jul 2007|
- MeV ion beam lithography
- Proton beam writing
- Proximity aperture