Designing single GaAs nanowire lasers

D. Saxena, S. Mokkapati, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

5 Citations (Scopus)

Abstract

Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).

Original languageEnglish
Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages101-102
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
EventConference on Optoelectronic and Microelectronic Materials and Devices 2012 - The University of Melbourne, Melbourne, Australia
Duration: 12 Dec 201214 Dec 2012
https://ieeexplore.ieee.org/xpl/conhome/6469377/proceeding (Proceedings)

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices 2012
Abbreviated titleCOMMAD 2012
CountryAustralia
CityMelbourne
Period12/12/1214/12/12
Internet address

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