Design of two-gain-level amplifier for Ka-band phase shifters using 0.15 μm GaAs pHEMT process

Kim Tuyen Trinh, Chia Han Lin, Hsuan Ling Kao, Hsien Chin Chiu, Nemai C. Karmakar

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

1 Citation (Scopus)


A two-gain-level GaAs pHEMT amplifier adopting Cascode and common source topologies, operating at 37 GHz for radiometer active phase shifters was designed. The EM simulated results show that the developed amplifier achieves a maximum gain of 19.4 dB and gain difference of 7.6 dB. The typical noise figures of 6 dB and 7.2 dB in high and low gain states respectively within 1 GHz bandwidth. DC power consumption is about 217 mW. Within the bandwidth of interest, the gain flatness is about ± 0.5 dB; the input and output return losses are larger 9 dB at 37 GHz for both gain stages. Gain levels are obtained by changing the gate voltage in the Cascode stage. The MMIC chip is fabricated by using 0.15 μm GaAs pHEMT Process. The total core area of the chip with all the pads is 1.5 mm × 1 mm.

Original languageEnglish
Title of host publication2020 4th Australian Microwave Symposium (AMS)
PublisherIEEE, Institute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)9781728147840
Publication statusPublished - Feb 2020
EventAustralian Microwave Symposium 2020 - Sydney, Australia
Duration: 13 Feb 202014 Feb 2020
Conference number: 4th (Proceedings)

Publication series

Name2020 4th Australian Microwave Symposium, AMS 2020


ConferenceAustralian Microwave Symposium 2020
Abbreviated titleAMS 2020
Internet address


  • Cascode topology
  • Common source
  • GaAs 0.15 pm process
  • Variable gain amplifier

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